Toshiba Launches 80V N-Channel Power MOSFET Using Its Latest Generation Process to Improve Efficiency in AI Data Centers

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPM1R408RH,” an 80V N-channel power MOSFET fabricated using U-MOS11-H, Toshiba’s latest-generation process^[1]. The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in AI data centers and communications base stations. Shipments start today.

The continuing expansion in AI processing has increased power demand in data centers, while advances in communications infrastructure have further intensified requirements for higher efficiency, smaller size (higher power density), and lower electromagnetic interference (EMI) in switched-mode power supplies. As power losses directly affect system power consumption, heat generation, and cooling load, it is important to deploy power semiconductors with characteristics that support a balanced reduction in conduction and switching losses and that contribute to overall system optimization, including improved EMI suppression, thermal design, and ease of mounting.

TPM1R408RH features an optimized device structure and realizes a drain-source On-resistance of 1.4mΩ (max)^[2], approximately 26% lower than that of “TPM1R908QM,” an 80V Toshiba product fabricated using Toshiba’s previous-generation U-MOS X-H process. It also improves the trade-off between drain-source On-resistance (R_DS(ON)) and total gate charge (Q_g), achieving approximately a 45% reduction in the figure of merit, R_DS(ON) × Q_g over TPM1R908QM. These characteristics represent industry-leading^[3] levels of low power loss.

TPM1R408RH also suppresses spike voltage generated between the drain and source during switching, helping to reduce EMI in switched-mode power supplies. EMI suppression often requires rework in later stages of design, but suppressing the device-originated spikes helps to reduce the rework and simplify filter and snubber circuits.

The new product adopts the SOP Advance(E) package, which delivers approximately 65% lower package resistance and approximately 15% lower thermal resistance than Toshiba’s current SOP Advance(N) package. By suppressing heat generation and improving heat dissipation, the package supports higher output and more compact power supply designs.

Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models, which accurately reproduce transient characteristics, are now available. An online circuit simulator on the Toshiba website allows users to easily verify circuit operation in a web browser, with no need to set up a simulation environment or download device models. (Online circuit simulator: here)

Toshiba will continue to expand its lineup of power MOSFETs that improve power supply efficiency, thereby helping to reduce power consumption in industrial equipment.

Notes:
[1] As of June 2026, based on Toshiba’s low-voltage power MOSFET processes.
[2] V_GS=10V, I_D=50A, T_a=25°C
[3] Toshiba survey, as of June 2026.

Applications

Industrial Equipment

• Switched-mode power supplies for AI data centers and communications base stations

Features

• Low drain-source On-resistance: R_DS(ON)=1.4mΩ (max) (V_GS=10V, I_D=50A, T_a=25°C)
• Low drain-source On-resistance × total gate charge: R_DS(ON)×Q_g＝1.4mΩ×80nC=112mΩ・nC (approximately 45% lower than 1.9 mΩ×108nC=205.2 mΩ・nC for TPM1R908QM)
• Adoption of the SOP Advance(E) package with low package resistance and low thermal resistance.

Main Specifications

(Unless otherwise specified, Ta=25°C)
Part number				TPM1R408RH
Absolute maximum ratings	Drain-source voltage VDSS (V)			80
	Drain current (DC) ID (A)	Tc=25°C		288
	Channel temperature Tch (°C)			175
Electrical characteristics	Drain-source On-resistance RDS(ON) (mΩ)	VGS=10V	Max	1.4
		VGS=8V	Max	1.7
	Total gate charge Qg (nC)	VGS=10V	Typ.	80
	Gate switch charge Qsw (nC)		Typ.	23
	Output charge Qoss (nC)		Typ.	161
	Reverse recovery time trr (ns)		Typ.	74
	Reverse recovery charge Qrr (nC)		Typ.	115
Package	Name			SOP Advance(E)
	Size (mm)		Typ.	4.9×6.1×1.0
Sample Check & Availability				Buy Online

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TPM1R408RH

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MOSFETs

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TPM1R408RH
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Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

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