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Everspin Expands PERSYST MRAM Family With High-Reliability Devices for Aerospace, Defense, Automotive and Industrial Applications

New AEC-Q100 Grade 1 MRAM Delivers 10-Year Data Retention at 125°C, 48-Hour Burn-In, and Unlimited Endurance for Mission-Critical Systems

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of persistent Magnetoresistive Random Access Memory (MRAM) solutions, today announced its newest high-reliability additions to the PERSYST MRAM product line: the EM064LX HR and EM128LX HR devices. Designed for extreme operating environments, these new xSPI MRAM products deliver the industry’s most robust combination of endurance, temperature performance and data retention for aerospace, defense, automotive and high-end industrial applications.

These newest additions extend Everspin’s leadership in non-volatile memory by delivering AEC-Q100 Grade 1 qualification for operation from -40°C to +125°C. Each device undergoes a 48-hour burn-in process and provides 10-year data retention at 125°C, ensuring predictable performance even under the most demanding conditions. With 64- and 128-megabit densities achieving 90 Mbytes/sec read and write bandwidth, sustained for over a decade, the EM064LX HR and EM128LX HR are built for systems that cannot risk data loss or degradation.

The EM064LX device underwent independent radiation testing at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory under a NASA Jet Propulsion Laboratory program. The tests validated the device’s high-reliability characteristics, showing no single-event latch-up (SEL) events up to an LET of 61 MeV-cm²/mg at ambient temperature. The EM064LX HR and EM128LX HR share the same design architecture and high-reliability specifications, supporting consistent performance across both devices.

“Our customers design systems that must perform without compromise in the harshest environments,” says Sanjeev Aggarwal, President and CEO of Everspin Technologies. “EM064LX and EM128LX family of products offer the most reliable and durable non-volatile memory where density and total bandwidth are key requirements. These solutions demonstrate Everspin’s ongoing commitment to supporting mission-critical designs that rely on memory performance and reliability under extreme conditions.”

The new solutions feature a Quad Serial Peripheral Interface (QSPI) supporting 133 MHz single transfer rate and 90 MHz dual transfer rate operation, delivering high bandwidth for data-intensive applications while maintaining the deterministic performance MRAM is known for. These capabilities make the EM064LX HR and EM128LX HR family of products ideal for systems requiring secure, persistent memory where bandwidth and reliability are equally important.

Key Benefits of Everspin’s PERSYST EMxxLX High-Reliability MRAM:

  • AEC-Q100 Grade 1 qualified, -40°C to +125°C operating range
  • 10-year data retention at 125°C with unlimited read/write endurance for 10 years
  • 48-hour burn-in for added reliability margin
  • Industry-standard QSPI interface and packages for design flexibility
  • Proven MRAM technology backed by independent testing and field validation

For more information on PERSYST EM064LX HR and EM128LX HR or Everspin’s full line of MRAM solutions visit www.everspin.com.

About Everspin Technologies

Everspin Technologies, Inc. (NASDAQ: MRAM) is the world’s leading provider of Magnetoresistive RAM (MRAM). Everspin MRAM delivers the industry’s most robust, highest-performance non-volatile memory for industrial, automotive, aerospace and other mission-critical applications where data persistence is essential. Headquartered in Chandler, Arizona, Everspin provides commercially available MRAM solutions to a large and diverse customer base.

Cautionary Statement Regarding Forward-Looking Statements

This press release contains forward-looking statements regarding future results that involve risks and uncertainties that could cause actual results or events to differ materially from the expectations disclosed in the forward-looking statements, including, but not limited to, the statements made under the caption “Business Outlook.” Forward-looking statements are identified by words such as “expects” or similar expressions. These include, but are not limited to, Everspin’s future financial performance, including the outlook for fourth quarter 2025 results. Actual results could differ materially from these forward-looking statements as a result of certain risks and uncertainties, including, without limitation, the risks set forth under the caption “Risk Factors” in Everspin’s Annual Report on Form 10-K for the year ended December 31, 2024, filed with the SEC on February 27, 2025, and its Quarterly Reports on Form 10-Q filed with the SEC during 2025, as well as in its subsequent filings with the SEC. Any forward-looking statements made by Everspin in this press release speak only as of the date on which they are made and subsequent events may cause these expectations to change. Everspin disclaims any obligations to update or alter these forward-looking statements in the future, whether as a result of new information, future events or otherwise, except as required by law.

Contacts

Media Contact:
Kiterocket
Stephanie Quinn
(480) 316-8370

Everspin Technologies, Inc.

NASDAQ:MRAM

Release Versions

Contacts

Media Contact:
Kiterocket
Stephanie Quinn
(480) 316-8370

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