TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the world’s first IGBT1 with 2.0kV withstand voltage, on June 30. The module is ideally suited to increase the efficiency and reduce the size of renewable-energy power converters, which are in high demand due to the growing use of renewable-energy power supplies. The module will be exhibited at the Applied Power Electronics Conference (APEC) 2021 Virtual Exposition from June 15 to 16.
1 According to Mitsubishi Electric research as of June 9, 2021
1) World-first IGBT with 2.0kV withstand voltage for more compact DC1500V power converters
- World’s first 2.0kV-rated IGBT suitable for DC1500V-rated power converters, which are difficult to design using conventional 1.7kV-rated IGBTs.
Enables development of simpler and smaller DC1500V-rated power converters without need for complex topology, such as three-level NPC (I-type connection).2
2 Circuit topology consisting of four series-connected IGBTs and two clamp diodes connected to voltage-neutral point in one leg
2) 7th-generation IGBT and RFC diodes help reduce power loss in power converters
Suitable for high-voltage, lower-power-loss applications as latest (7th-generation) IGBT with CSTBTTM 3 structure and RFC (Relax Field of Cathode) diodes4 optimized for high withstand voltage.
3 Mitsubishi Electric’s unique IGBT that utilizes the carrier cumulative effect
4 Mitsubishi Electric’s original diode that optimizes electron mobility on cathode side
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