Mitsubishi Electric to Launch T-series 2.0kV IGBT Module for Industrial Use

Will increase efficiency and power density of renewable-energy power supply systems rated DC1500V

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the world’s first IGBT¹ with 2.0kV withstand voltage, on June 30. The module is ideally suited to increase the efficiency and reduce the size of renewable-energy power converters, which are in high demand due to the growing use of renewable-energy power supplies. The module will be exhibited at the Applied Power Electronics Conference (APEC) 2021 Virtual Exposition from June 15 to 16.
¹ According to Mitsubishi Electric research as of June 9, 2021

Product Features

1) World-first IGBT with 2.0kV withstand voltage for more compact DC1500V power converters

• World’s first 2.0kV-rated IGBT suitable for DC1500V-rated power converters, which are difficult to design using conventional 1.7kV-rated IGBTs.
• Enables development of simpler and smaller DC1500V-rated power converters without need for complex topology, such as three-level NPC (I-type connection).^{2
  2} Circuit topology consisting of four series-connected IGBTs and two clamp diodes connected to voltage-neutral point in one leg

2) 7th-generation IGBT and RFC diodes help reduce power loss in power converters

• Suitable for high-voltage, lower-power-loss applications as latest (7th-generation) IGBT with CSTBT^{TM 3} structure and RFC (Relax Field of Cathode) diodes⁴ optimized for high withstand voltage.
  ³ Mitsubishi Electric’s unique IGBT that utilizes the carrier cumulative effect
  ⁴ Mitsubishi Electric’s original diode that optimizes electron mobility on cathode side

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