-

Media Alert: Atomera Highlights MST® as a Toolbox for Engineering Silicon Virtual Substrates at 2025 CINT Annual User Meeting

--(BUSINESS WIRE)--Atomera Incorporated (Nasdaq: ATOM):

WHO:

Marek Hytha, Atomera Chief Scientist — presenting research on MST; Dan Holladay, Director of Operations

 

WHAT:

In-person poster entitled “MST: A Toolbox for Engineering Silicon Virtual Substrates: From GaN-on-Si to Piezo-Si and Spintronics”

 

WHEN:

September 15 & 16, 2025

 

 

WHERE:

Santa Fe Convention Center

 

201 W. Marcy St.

 

Santa Fe, NM 87501

Marek Hytha, Atomera Chief Scientist, will present research on Mears Silicon Technology™ (MST®) — technology that enhances the performance of silicon-based semiconductor devices by inserting ultra-thin layers of oxygen into silicon wafers — as an atomic-scale substrate engineering platform enabling new frontiers in beyond-CMOS applications.

With adjustable layer count, spacing and composition, MST can be precisely engineered to enhance key semiconductor properties, including diffusion blocking, variability, mobility, gate leakage and reliability across GaN-on-Si, piezoelectric and spintronic applications. The poster will cover:

  • MST Substrate for GaN-on-Si Epitaxy
    • Building on its successful use in CMOS and RF-SOI devices, MST grown on Si (111) substrates is now being explored as a virtual substrate for GaN-on-Si Epitaxy to improve material quality and device performance, reduce leakage current and provide higher breakdown voltage for RF and power applications.
  • MST Piezoelectric Substrate
    • The oxygen atoms in MST form polar Si–O–Si dipoles. These dipoles, while randomly oriented in their as-grown state, can be aligned through applied electric fields and mechanical stress. This alignment induces net polarization, effectively generating a measurable piezoelectric effect in an otherwise non-piezoelectric silicon, opening pathways for integrating piezoelectric functions directly into standard silicon chips.
  • MST-Mn Diluted Magnetic Semiconductor Virtual Substrate for Spintronics
    • MST enables spintronic applications by supporting stable, room-temperature diluted magnetic semiconductors (DMS) in silicon. With uniform distribution of elements like manganese (Mn), MST is expected to provide efficient spin injection and carrier-mediated ferromagnetism, unlocking next-gen devices like MRAM and spin-LEDs for energy-efficient computing.

Follow Atomera:

Company website: https://atomera.com/

Atomera whitepaper: https://atomera.com/news-and-blogs/

Atomera blog: https://atomera.com/news-and-blogs/

LinkedIn: www.linkedin.com/company/atomera/

About Atomera

Atomera Incorporated, one of America’s top 100 Best Small Companies in 2022 ranked by Forbes, is a semiconductor materials and technology licensing company focused on deploying its proprietary, silicon-proven technology into the semiconductor industry. Atomera has developed Mears Silicon Technology™ (MST®), which increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor. More information can be found at www.atomera.com.

Contacts

Press Contact:
Rachel Yang
The Hoffman Agency
t: (360) 910-5860
rachely@hoffman.com

Atomera Incorporated

NASDAQ:ATOM

Release Versions

Contacts

Press Contact:
Rachel Yang
The Hoffman Agency
t: (360) 910-5860
rachely@hoffman.com

Social Media Profiles
More News From Atomera Incorporated

Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon

LOS GATOS, Calif.--(BUSINESS WIRE)--Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and technology licensing company, today announced a new approach to GaN-on-Silicon that addresses a key performance barrier limiting its use in mainstream RF applications. Today, high-performance RF GaN devices are typically built on silicon carbide substrates, which provide excellent performance but remain costly and difficult to scale. Silicon offers a lower-cost, more scalable foundation with t...

Atomera Extends Collaboration With Synopsys to Accelerate GaN Modeling in High-Value RF and Power Devices

LOS GATOS, Calif.--(BUSINESS WIRE)--Atomera Incorporated (NASDAQ: ATOM), a semiconductor materials and technology licensing company, today announced an expanded collaboration with Synopsys, Inc. — the leader in engineering solutions from silicon to systems — to advance gallium nitride (GaN) device modeling for radio frequency (RF) and power semiconductor applications. The work builds on the companies’ long-standing relationship around Synopsys’ Sentaurus™ TCAD and Atomera’s MSTcad™ toolset and...

Media Alert: Atomera to Speak on Growing Revenues and Improving GaN in Power Electronics With a Dash of Oxygen at Compound Semiconductor International Conference 2026

--(BUSINESS WIRE)--Atomera Incorporated (Nasdaq: ATOM): WHO: Robert Mears, CTO and founder of Atomera Incorporated (Nasdaq: ATOM), a semiconductor materials and technology licensing company WHAT: In-person talk on improving gallium nitride (GaN) on silicon (Si) with dash of oxygen, a breakthrough technology proven in partnership with Texas State University (Prof. E. Piner) and Sandia National Laboratories WHEN: Tuesday, April 21 at 11:00 a.m. CET (2:00 a.m. PDT) WHERE: Sheraton Brussels Airport...
Back to Newsroom