-

Mitsubishi Electric to Ship Full-SiC and Hybrid-SiC SLIMDIP Samples

SLIMDIP series’ first SiC modules offer high output and low power loss for energy-saving appliances

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new SLIMDIP series power semiconductor modules for room air conditioners and other home appliances, the Full SiC (silicon carbide) SLIMDIP (PSF15SG1G6) and the Hybrid SiC SLIMDIP (PSH15SG1G6), on April 22. Both modules, the first SiC versions in the company’s SLIMDIP series of compact, terminal-optimized modules, achieve excellent output and power loss reduction for energy savings in small- to large-capacity appliances. They will be exhibited at Power Conversion Intelligent Motion (PCIM) Expo & Conference 2025 in Nuremberg, Germany from May 6 to 8, as well as trade shows in Japan, China and other countries.

Mitsubishi Electric’s newly developed silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) chip is incorporated into both new SLIMDIP packages. Compared to current silicon (Si)-based reverse-conducting insulated-gate bipolar transistor (RC-IGBT) SLIMDIP modules, these new SiC modules achieve higher output for larger-capacity appliances. Additionally, compared to the Si-based module, power loss is reduced by 79% with the Full SiC SLIMDIP and by 47% with the Hybrid SiC SLIMDIP for more energy-efficient appliances. With these two new modules as well as existing Si-based RC-IGBT SLIMDIP modules, the SLIMDIP series now offers three options for use in inverter boards of appliances such as room air conditioners, each one suited to specific electrical capacity and performance needs, but all offered in the same package to help reduce the burden of designing inverter substrates.

For the full text, please visit: www.MitsubishiElectric.com/news/

Contacts

Customer Inquiries
Semiconductor & Device Marketing Div.A
Mitsubishi Electric Corporation
www.MitsubishiElectric.com/semiconductors/

Media Inquiries
Takeyoshi Komatsu
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-2332
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/

Mitsubishi Electric Corporation

TOKYO:6503

Release Versions

Contacts

Customer Inquiries
Semiconductor & Device Marketing Div.A
Mitsubishi Electric Corporation
www.MitsubishiElectric.com/semiconductors/

Media Inquiries
Takeyoshi Komatsu
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-2332
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/

More News From Mitsubishi Electric Corporation

Mitsubishi Electric Invests in ADT Technology Service (Suzhou) in China

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that its wholly owned subsidiary, Mitsubishi Electric Intelligent Manufacturing Technology (China) Group Co., Ltd. in Suzhou, China, acquired a stake in ADT Technology Service (Suzhou) Co., Ltd., a Suzhou-based software developer with which the subsidiary had signed a collaboration agreement. By collaborating with ADTTech, which develops software for production planning, manufacturing management, quality contr...

Mitsubishi Electric to Strengthen Global Human Resources Allocation and Development with Talent Mobility and G-OJT Systems

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch the Talent Mobility System to match employees with jobs in the company’s global group in order to develop, mobilize and engage top talent. It will also revise the Global- On the Job Training (G-OJT) System to provide young employees with deeper overseas work experiences compared to those of conventional overseas temporary-training programs. Mitsubishi Electric, which employs approximately 1...

Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power. These new...
Back to Newsroom