-

Mitsubishi Electric to Ship Samples of DFB-CAN with Built-in Wavelength Monitor for Digital Coherent Communication

Small-package TO-56CAN will contribute to miniaturized, low-power consumption of optical transceiver modules

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today that it will begin shipping samples of its latest optical device, a DFB-CAN with built-in wavelength monitor, on April 1. This innovative new light source, the industry’s first to use the TO-56CAN package for digital coherent communication capable of high-speed, long-distance transmission, is expected to contribute to the realization of ultra-small, low-power consumption of optical transceiver modules.

Communication traffic is growing rapidly due to advances in IoT technology, high-resolution video streaming, and generative AI technology, requiring networks to deliver ever-higher speeds and capacities. However, faster optical communication signal speeds can cause waveform distortion due to chromatic dispersion, which limits signal transmission distances. Digital coherent communication corrects such distortions using digital signal processing technology, allowing optical signals to be transmitted at higher speeds and over longer distances compared to conventional intensity modulation methods. In parallel, the use of optical transceiver modules is increasing as optical communication traffic grows. Both trends are driving demand for optical transceiver modules and related components that combine small footprints and low power consumption.

Mitsubishi Electric’s new DFB-CAN’s compact package includes a DFB laser chip and a wavelength monitor chip. Its unprecedented low-power consumption of only 1W was achieved by improving the thermal exchange element for temperature control in the DFB laser chip and optimizing the design for heat dissipation.

For the full text, please visit: www.MitsubishiElectric.com/news/

Contacts

Customer Inquiries
Semiconductor & Device Marketing Div.B
Mitsubishi Electric Corporation
www.MitsubishiElectric.com/semiconductors/

Media Inquiries
Takeyoshi Komatsu
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-2346
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/

Mitsubishi Electric Corporation

TOKYO:6503

Release Versions

Contacts

Customer Inquiries
Semiconductor & Device Marketing Div.B
Mitsubishi Electric Corporation
www.MitsubishiElectric.com/semiconductors/

Media Inquiries
Takeyoshi Komatsu
Public Relations Division
Mitsubishi Electric Corporation
Tel: +81-3-3218-2346
prd.gnews@nk.MitsubishiElectric.co.jp
www.MitsubishiElectric.com/news/

More News From Mitsubishi Electric Corporation

Mitsubishi Electric Invests in ADT Technology Service (Suzhou) in China

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that its wholly owned subsidiary, Mitsubishi Electric Intelligent Manufacturing Technology (China) Group Co., Ltd. in Suzhou, China, acquired a stake in ADT Technology Service (Suzhou) Co., Ltd., a Suzhou-based software developer with which the subsidiary had signed a collaboration agreement. By collaborating with ADTTech, which develops software for production planning, manufacturing management, quality contr...

Mitsubishi Electric to Strengthen Global Human Resources Allocation and Development with Talent Mobility and G-OJT Systems

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch the Talent Mobility System to match employees with jobs in the company’s global group in order to develop, mobilize and engage top talent. It will also revise the Global- On the Job Training (G-OJT) System to provide young employees with deeper overseas work experiences compared to those of conventional overseas temporary-training programs. Mitsubishi Electric, which employs approximately 1...

Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power. These new...
Back to Newsroom