EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high power density, low-cost DC-DC conversion demonstrated in the EPC9151 power module.

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the availability of the EPC9151, a 300 W bidirectional DC-DC voltage regulator in the very small 16^th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). The EPC9151 power module features Microchip’s dsPIC33CK digital signal controller (DSC) with the EPC2152 ePower™ Stage integrated circuit from EPC to achieve greater than 95% efficiency in a 300 W 48 V to/from 12 V converter design. Additional phases can be added to this scalable 2-phase design to further increase power.

Brick DC-DC converters are widely used in data center, telecommunication and automotive applications, converting a nominal 48 V to (or from) a nominal 12 V distribution bus. Advances in GaN integrated circuit (IC) technology have enabled the integration of the half bridge and gate drivers, resulting in the EPC2152 single chip solution employed in the EPC9151 module to simplify layout, minimize area, and reduce cost for these applications.

“eGaN FETs and integrated circuits provide the fast switching, small size, and low cost needed to meet the stringent power density requirements of leading-edge computing applications,” said Alex Lidow, CEO of EPC. “The EPC9151 is an ideal example of the capabilities of the integrated power stage, EPC2152, to increase the power density and reduce system costs for the 48 V power conversion requirement of these applications.”

Price and Availability

The EPC9151 demonstration board is priced $414.00 each and is available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.