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LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Europe Growth Strength UCITS ETF 20.05.2026 FTEG.LN IE0009F7UB30 125,002.00 EUR 2,624,019.09 20.992  ...

LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Vest US Equity Max Buffer UCITS ETF - December 20.05.2026 MDEC.LN IE0007FIJUO5 50,002.00 USD 1,400,574.69 28.010  ...

LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Europe Rising Dividend Achievers UCITS ETF 20.05.2026 EDVY.LN IE000CPG9HG3 75,002.00 EUR 1,594,537.49 21.260  ...

LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Bloomberg Nuclear Power UCITS ETF 20.05.2026 RCTR.LN IE000J5PESP7 150,002.00 USD 2,863,027.93 19.087  ...

TAIPEI, Taiwan & MILPITAS, Calif.--(BUSINESS WIRE)--Silicon Motion Technology Corporation (NasdaqGS: SIMO) ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced that it has successfully achieved ISO 26262 functional safety process certification for automotive applications. ISO 26262 is the international standard for functional safety in road vehicles, establishing rigorous requirements for the development and valid...

OSLO, Norway--(BUSINESS WIRE)--NEP Mediabank, a business unit of NEP Europe, has launched its new direct-to-consumer OTT streaming service, Play, in partnership with Norsk Rikstoto....

CAMBRIDGE, England--(BUSINESS WIRE)--Xairos concludes Phase 1 of the £1.4M Innovate UK programme, advancing Xairos-Athena for resilient, GNSS-independent quantum timing in infrastructure....

日本川崎--(BUSINESS WIRE)--(美國商業資訊)-- Toshiba Electronic Devices & Storage Corporation（以下簡稱 Toshiba）今日開始出貨「TW007D120E」測試樣品，此 1200 V 溝槽式閘極 SiC MOSFET 主要用於次世代 AI 資料中心的電源供應系統，亦適用於再生能源相關設備。 隨著生成式 AI 快速擴張，耗電量遽增已成為資料中心迫在眉睫的課題。尤其是高功率 AI 伺服器的廣泛採用，以及 800 V 高壓直流 (HVDC) 架構部署日益增加，正全面推升市場對高電源轉換效率與高功率密度電源供應系統的需求。Toshiba 研發出 TW007D120E 以因應次世代 AI 資料中心需求，將有助於降低耗電量，並推動電源供應系統實現小型化與高效化。 TW007D120E 採用 Toshiba 獨家溝槽式閘極結構 [1]，達到業界領先 [2] 的低單位面積導通電阻 (RDS (on)) A)；透過更低的導通電阻減少導通損耗，同時降低切換損耗。與 Toshiba 現有產品相比，TW007D120E 的 RDS...

日本川崎--(BUSINESS WIRE)--(美国商业资讯)-- Toshiba Electronic Devices & Storage Corporation（简称“Toshiba”）今天宣布1200V沟槽栅SiC MOSFET产品“TW007D120E”的测试样品开始出货。该产品主要面向下一代AI数据中心电源系统，同时也适用于可再生能源相关设备。 随着生成式人工智能（AI）的快速发展，电能消耗不断上升已成为数据中心面临的紧迫课题。尤其是高功率AI服务器的广泛应用以及800V高压直流（HVDC）架构部署的增加，推动了市场对更高功率转换效率和更高功率密度电源系统的需求。针对下一代人工智能数据中心的这些需求，Toshiba开发了TW007D120E，该产品将有助于降低功耗，并实现电源系统的小型化和更高效率。 TW007D120E采用Toshiba专有的沟槽栅结构[1]，实现了业界领先[2]的单位面积低导通电阻（RDS(on)A）；其通过更低的导通电阻降低导通损耗，同时实现更低的开关损耗。与Toshiba现有产品相比，TW007D120E将RDS(on)DS(on)A降低了约5...

DALLAS--(BUSINESS WIRE)--Jacobs selected to provide environmental baseline for Oldbury, UK....