CORRECTING and REPLACING Samsung Electronics Unveils Comprehensive Data Center SSD Lineup for Enterprise and Business Big Data Applications

New lineup designed to address supercomputing trends of big data, artificial intelligence and the Internet of Things

RIDGEFIELD PARK, N.J.--(BUSINESS WIRE)--Please replace the release dated September 4, 2018 with the following corrected version due to multiple revisions.

The corrected release reads:

SAMSUNG ELECTRONICS UNVEILS COMPREHENSIVE DATA CENTER SSD LINEUP FOR ENTERPRISE AND BUSINESS BIG DATA APPLICATIONS

New lineup designed to address supercomputing trends of big data, artificial intelligence and the Internet of Things

Samsung Electronics America, Inc. today unveiled the Samsung Data Center solid-state drive (SSD) lineup to address the growing demand for high-performance computing storage in the big data era. Samsung’s new family of Data Center SSD solutions, which consists of the 860 DCT, 883 DCT, 983 DCT and the 983 ZET, are engineered to meet the evolving needs of small and medium-sized businesses (SMBs), including faster, sustained performance, higher capacities and enterprise-class reliability and security.

“Samsung’s Data Center SSD portfolio provides whitebox server builder, solution providers, and SMBs with a future-proof lineup to fit their unique business needs in the incredibly diverse enterprise SSD market,” said Richard Leonarz, director of memory product marketing at Samsung Electronics. “Samsung leveraged years of memory product engineering expertise to deliver a simple, yet optimized SSD lineup that addresses today’s supercomputing trends.”

Samsung’s new SSD portfolio is expected to raise the bar for data center efficiency compared to legacy storage systems, requiring less power and cooling for a lower total cost of ownership (TCO). The lineup delivers better Quality of Service (QoS) through reduced latency and data delays and offers enhanced reliability and endurance for 24/7 operation backed by a 5-year limited.

The comprehensive SSD lineup includes the following solutions to meet the widest range of data center storage demands:

• The 860 DCT is designed for servers requiring SSD-levels of sustained performance and is suitable for various applications, including content delivery networks. It allows for a lower TCO compared to hard disk drives (HDDs) and offers high capacities up to 3.84TB.
• The 883 DCT is designed for servers used to safeguard critical data and supports power loss protection and end-to-end data protection. It offers a high QoS under the SATA interface and will be available in a broad range of capacities from 240GB to 3.84TB.
• The 983 DCT is a high-performance solution for servers using an NVMe™ interface, which allows for blazing-fast speeds and high responsiveness. It comes in two form factors – 2.5-inch and M.2 – and delivers sequential read/write speeds of up to 3,000/1,900 MB/s (2.5-inch) and 3,000/1,400 MB/s (M.2). The 983 DCT is ideal for real-time big data analytics applications.
• The 983 ZET is a powerful cache memory solution that offers a new level of performance with ultra-low latency, high level QoS, breakthrough speeds and high reliability. It is the perfect storage solution for read cache applications, such as hybrid caching servers and NoSQL databases.

All of Samsung’s new Data Center SSDs can be managed with the advanced Samsung SSD Toolkit, which allows for efficient and simple maintenance with functions such as firmware updates, data erasure, over-provisioning setup and disk status indicators. The new lineup will be available in select regions beginning. The 860 DCT, 883 DCT and 983 DCT are available now and the 983 ZET will be available October 8th. For more information, please visit www.samsung.com/us/business.

Key Specifications:
		860 DCT	883 DCT	983 DCT	983 ZET
Interface		SATA 6Gbps	SATA 6Gbps	PCIe Gen 3.0 x4, NVMe™ 1.2b	PCIe Gen 3.0 x4, NVMe™ 1.2b
Form Factor		2.5-inch 7mmT	2.5-inch 7mmT	2.5-inch 7mmT(U.2), M.2 (22110)	HHHL (half height, half length)
Hardware	NAND	Samsung V-NAND	Samsung V-NAND	Samsung V-NAND	Samsung Low Latency V-NAND
	CTRL	MARU	MARU	Phoenix	Phoenix
	DRAM	4GB LPDDR4 (3.84TB) 2GB LPDDR4 (1.92TB) 1GB LPDDR4 (960GB)	4GB LPDDR4 (3.84TB) 2GB LPDDR4 (1.92TB) 1GB LPDDR4 (960GB) 512MB LPDDR4 (480GB, 240GB)	3GB LPDDR4 (1.92TB) 1.5GB LPDDR4 (960GB)	1.5GB LPDDR4
Capacity^1		3.84TB, 1.92TB, 960GB	3.84TB, 1.92TB, 960GB, 480GB, 240GB	1.92TB, 960GB	960GB, 480GB
Seq. Read/Write^2		Up to 550/520 MB/s	Up to 550/520 MB/s	Up to 3,000/1,900 MB/s (2.5-inch 1.92TB) Up to 3,000/1,050 MB/s (2.5-inch 960GB) Up to 3,000/1,400 MB/s (M.2 1.92TB) Up to 3,000/1,100 MB/s (M.2 960GB)	Up to 3,400/3,000 MB/s
Power Loss Protection		Not provided	Provided	Provided	Provided
Data encryption		Class 0 (AES 256)	Class 0 (AES 256)	Class 0 (AES 256), TCG/Opal	Class 0 (AES 256)
Total Bytes Written^3		Up to 1,396TB (3.84TB) Up to 698TB (1.92TB) Up to 349TB (960GB)	Up to 5,466TB (3.84TB) Up to 2,733TB (1.92TB) Up to 1,366TB (960GB) Up to 683TB (480GB) Up to 341TB (240GB)	Up to 2,733TB (1.92TB) Up to 1,366TB (960GB)	Up to 17.52PB (960GB) Up to 7.44PB (480GB)
Warranty^4		Up to 5-year limited warranty	Up to 5-year limited warranty	Up to 5-year limited warranty	Up to 5-year limited warranty

1.	1GB=1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the product label.
2.	For detail test conditions, please refer to each product’s respective data sheet.
	*860 DCT, 883 DCT: Performance measured using FIO 2.18 with queue depth 32, Z270 Intel SATA 6G port. Measurements are performed on whole LBA range. Write cache enabled. Performance may vary depending on capacity.
	*983 DCT: Based on PCI Express Gen3 x4, Random performance measured using FIO 2.7 in CentOS6.6 (kernel 3.14.29) with 4KB (4,096 bytes) of data transfer size in queue depth 32 by 4 workers and Sequential performance with 128KB (131,072 bytes) of data transfer size in queue depth 32 by 1 worker. Actual performance may vary depending on use conditions and environment. 1 MB/sec = 1,000,000 bytes/sec was used in sequential performance.
	*983 ZET: Based on PCI Express Gen3 x4, Random performance measured using FIO in Cent OS 7.0 with queue depth 32 by 4 workers and Sequential performance with queue depth 32 by 1 worker. Actual performance may vary depending on use conditions and environment. 1 MB/sec = 1,000,000 bytes/sec was used in sequential performance.
3.	TBW (Total bytes written) is measured while running 100 % random 4 KB writes across the entire SSD (TBW = DWPD x 365 x 3 x User capacity).
	*All documented endurance test results are obtained in compliance with JESD218 Standards. Please visit www.jedec.org for detailed information on JESD218 Standards.
4.	For more details on 5-years limited warranty, please contact your local Samsung sales representative.
	*The NVM Express® design mark is a registered trademark of NVM Express, Inc.

About Samsung Electronics America, Inc.
Headquartered in Ridgefield Park, N.J., Samsung Electronics America, Inc. (SEA), is a recognized innovative leader in consumer electronics, mobile devices and enterprise solutions. A wholly owned subsidiary of Samsung Electronics Co., Ltd., SEA is pushing beyond the limits of today’s technology and providing consumers and organizations with a portfolio of groundbreaking products in appliances, home entertainment, Internet of Things, mobile computing, smartphones, virtual reality, wireless infrastructure and wearables, in addition to offering leading content and services related to mobile payments, 360-degree VR video, customer support and more. Samsung is a pioneering leader in smartphones and HDTVs in the U.S. and one of America’s fastest growing home appliance brands. To discover more about Samsung, please visit www.samsung.com. For the latest Samsung news, please visit news.samsung.com/us and follow us @SamsungNewsUS.