Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors

Advanced bare dies for diverse embedding needs, enabling lower power consumption in power electronics equipment

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power. These new power semiconductor bare dies will contribute to efforts to embed advanced bare dies in various power electronics equipment to lower power consumption while maintaining performance.

Mitsubishi Electric will exhibit the new trench SiC-MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, as well as exhibitions in North America, Europe, China, India and elsewhere.

The market for power electronics equipment is expected to expand in line with global efforts targeting decarbonization. As part of this trend, the demand is growing for power semiconductors embedded with highly efficient bare dies that enable EV traction inverters and renewable-energy power supply systems to consume less power while maintaining their high performance and quality.

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