IGBT and Super Junction MOSFET Business Research Report 2024: Market to Reach $21.1 Billion by 2030, Growing at a CAGR of 10.3% Driven by Demand for Energy-efficient Semiconductor Components - ResearchAndMarkets.com

DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering.

The global market for IGBT and Super Junction MOSFET was estimated at US$10.6 Billion in 2023 and is projected to reach US$21.1 Billion by 2030, growing at a CAGR of 10.3% from 2023 to 2030. This comprehensive report provides an in-depth analysis of market trends, drivers, and forecasts, helping you make informed business decisions.

Insulated Gate Bipolar Transistors (IGBTs) and Super Junction Metal-Oxide-Semiconductor Field-Effect Transistors (SJ MOSFETs) are crucial semiconductor devices in power electronics, widely used to manage high-power applications efficiently. IGBTs are highly effective in switching and amplifying electric signals, making them essential in industries like renewable energy, automotive, and industrial machinery. Super Junction MOSFETs, on the other hand, deliver high-speed switching capabilities with reduced power loss, making them invaluable in applications requiring high efficiency and low heat dissipation. Together, these components play a pivotal role in optimizing power management across numerous sectors by enabling energy-efficient, compact, and high-performing solutions.

The Growth in the IGBT and Super Junction MOSFET Market Is Driven by Several Factors

The growth in the IGBT and Super Junction MOSFET market is driven by several factors, including advancements in semiconductor materials, increased demand for energy-efficient devices, and the global shift toward electrification. The widespread adoption of EVs, renewable energy systems, and industrial automation has significantly bolstered demand for these components, as they are integral to managing and converting high power efficiently.

The rise in smart infrastructure and the adoption of power-hungry applications in consumer electronics and telecommunications have further driven the need for compact, high-performance semiconductor solutions. Moreover, government incentives and mandates promoting energy efficiency and reduced emissions have accelerated the adoption of these technologies in multiple sectors, supporting market growth.

How Are Technological Advancements Shaping IGBT and SJ MOSFET Applications?

Technological advancements have led to significant improvements in the performance, efficiency, and application range of IGBTs and SJ MOSFETs. Innovations in semiconductor material science, especially with the development of silicon carbide (SiC) and gallium nitride (GaN), have enhanced the durability, thermal tolerance, and operational efficiency of these devices.

SiC-based IGBTs and SJ MOSFETs offer lower power loss and better thermal conductivity, making them ideal for high-demand environments like electric vehicles (EVs) and industrial automation. Additionally, smaller form factors and advanced packaging techniques have enabled the integration of these components in compact, high-power modules, improving the overall efficiency of power electronic systems and expanding their use in consumer electronics, energy storage, and aerospace.

Why Are IGBTs and SJ MOSFETs Critical in Emerging Energy Technologies?

As the world pivots toward renewable energy and electrification, IGBTs and SJ MOSFETs have become critical components in systems like solar inverters, wind turbines, and EVs. These devices facilitate efficient power conversion, which is essential for managing renewable energy sources and storing energy in batteries. In EVs, IGBTs control the motor and charging system, optimizing energy usage, while SJ MOSFETs ensure fast, efficient power management. Moreover, the rising adoption of smart grid technologies, which require reliable and efficient power distribution, has further highlighted the importance of these components. As the demand for cleaner energy solutions grows, so too does the reliance on advanced IGBT and MOSFET technologies.

Report Features:

• Comprehensive Market Data: Independent analysis of annual sales and market forecasts in US$ Million from 2023 to 2030.
• In-Depth Regional Analysis: Detailed insights into key markets, including the U.S., China, Japan, Canada, Europe, Asia-Pacific, Latin America, Middle East, and Africa.
• Company Profiles: Coverage of major players in the Global IGBT and Super Junction MOSFET Market such as ABB Group, Fairchild Semiconductor International Inc., Fuji Electric Co., Ltd., Hitachi Power Semiconductor Device Ltd., Infineon Technologies AG and more.
• Complimentary Updates: Receive free report updates for one year to keep you informed of the latest market developments.

Key Insights:

• Market Growth: Understand the significant growth trajectory of the Insulated Gate Bipolar Transistor (IGBT) segment, which is expected to reach US$19.1 Billion by 2030 with a CAGR of a 10.4%. The Super junction MOSFET segment is also set to grow at 9.3% CAGR over the analysis period.
• Regional Analysis: Gain insights into the U.S. market, estimated at $3.0 Billion in 2023, and China, forecasted to grow at an impressive 9.5% CAGR to reach $3.2 Billion by 2030. Discover growth trends in other key regions, including Japan, Canada, Germany, and the Asia-Pacific.

Segments

• Application (Uninterrupted Power Supply (UPS), Wind Turbines, Photovoltaic (PV) Inverter, Rail Traction, Consumer Applications, Electric Vehicles/Hybrid Electric Vehicles (EV/HEV), Motor Drives, Industrial Applications, Converters, Adapters and Chargers, Lighting, Other Applications)
• Product Type (Insulated Gate Bipolar Transistor (IGBT), Super junction MOSFET)

Key Attributes:

Report Attribute	Details
No. of Pages	189
Forecast Period	2023 - 2030
Estimated Market Value (USD) in 2023	$10.6 Billion
Forecasted Market Value (USD) by 2030	$21.1 Billion
Compound Annual Growth Rate	10.3%
Regions Covered	Global

Key Topics Covered:

MARKET OVERVIEW

• Influencer Market Insights
• World Market Trajectories
• Impact of COVID-19 and a Looming Global Recession
• IGBT and Super Junction MOSFET - Global Key Competitors Percentage Market Share in 2024 (E)
• Competitive Market Presence - Strong/Active/Niche/Trivial for Players Worldwide in 2024 (E)

MARKET TRENDS & DRIVERS

• Increasing Adoption in Electric Vehicle Power Electronics
• Demand for Energy-efficient Semiconductor Components
• Rise in Renewable Energy Projects Driving IGBT Demand
• Expansion of Industrial Motor Drives and Control Systems
• Surge in Usage for High-voltage and High-frequency Applications
• Growth in Demand for Compact and Low-loss Power Components
• Innovations in Heat Dissipation and Thermal Management Technologies
• Increased Application in Consumer Electronics for Energy Efficiency
• Rise in Electrification of Railways and Urban Transport Systems
• Growing Adoption in Uninterruptible Power Supplies (UPS)
• Increased Demand from Data Centers for Power Management Solutions
• Advances in Semiconductor Manufacturing Processes for Cost Efficiency

FOCUS ON SELECT PLAYERS: Some of the 31 companies featured in this Global IGBT and Super Junction MOSFET report include

• ABB Group
• Fairchild Semiconductor International Inc.
• Fuji Electric Co., Ltd.
• Hitachi Power Semiconductor Device Ltd.
• Infineon Technologies AG
• Mitsubishi Electric Corporation
• Semikron, Inc.
• STMicroelectronics NV
• Toshiba Corporation
• Vishay Intertechnology, Inc.

For more information about this report visit https://www.researchandmarkets.com/r/42z1m9

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