-

Kioxia Announces Expansion of Yokohama Technology Campus and New Research Center to Strengthen Research and Technology Development and Promote Open Innovation

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, the world leader in memory solutions, today announced a 20 billion yen investment to expand its Technology Development Building at its Yokohama Technology Campus and to establish its new Shin-Koyasu Advanced Research Center. The new facilities are expected to be operational by 2023 and will strengthen Kioxia’s research and technology development by bringing together its R&D sites in Kanagawa Prefecture to improve efficiency and to create a more conducive working environment for innovation through collaboration.

At the Yokohama Technology Campus, the expanded Technology Development Building will nearly double the space of the current facility, allowing Kioxia to expand its product evaluation capabilities that will, in turn, increase its product quality. The expanded facility will also provide space for an increased workforce to strengthen product development in the future. The new building will also feature an environmentally friendly design with highly efficient energy-saving equipment.

The Shin-Koyasu Advanced Research Center will feature a clean room which will be used for a wide range of research, with a particular focus on materials and new processes.

By investing in these facilities, Kioxia aims to strengthen its flash memory and SSD technology development capabilities to meet increasing demand around the world and to create innovative memory technologies and products that provide new value.

Under its mission of uplifting the world with memory, Kioxia is focused on cultivating the new era of memory. Kioxia remains committed to enhancing its position in the memory and SSD industry through capital investment and research and development that reflect market trends.

Yokohama Technology Campus Technology Development Building (tentative name)

Location: Kasama 2-chome, Sakae-ku, Yokohama-shi, Kanagawa Prefecture
Building scale: 6 stories
Total floor area: Approx. 40,000m2
Scheduled start of construction: Autumn 2021
Scheduled completion: Summer 2023

Shin-Koyasu Advanced Research Center (tentative name)

Location: Moriya-cho 3-chome, Kanagawa-ku, Yokohama-shi, Kanagawa Prefecture
Building scale: 4 stories
Total floor area: Approx. 13,000m2
Operation schedule: Summer 2023

About Kioxia

Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with memory by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, SSDs, automotive and data centers.

Contacts

Kota Yamaji
Public Relations
Kioxia Holdings Corporation
81-3-6478-2319
kioxia-hd-pr@kioxia.com

Kioxia Corporation



Contacts

Kota Yamaji
Public Relations
Kioxia Holdings Corporation
81-3-6478-2319
kioxia-hd-pr@kioxia.com

More News From Kioxia Corporation

KIOXIA SSDs Achieve Compatibility with Microchip’s Adaptec® SmartRAID 4300 Series RAID Storage Accelerator

TOKYO--(BUSINESS WIRE)--Kioxia Corporation announced that its SSDs have been tested for compatibility and interoperability with the Microchip RAID storage accelerator card....

KIOXIA AiSAQ™ Technology Integrated into Milvus Vector Database

TOKYO--(BUSINESS WIRE)--Kioxia Corporation announces that its KIOXIA AiSAQ™ has been integrated into the open-source vector database Milvus beginning with version 2.6.4....

Kioxia Develops Core Technology that Will Allow the Practical Implementation of High-density, Low-power 3D DRAM

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of high-density, low-power 3D DRAM. This technology was presented at the IEEE International Electron Devices Meeting (IEDM) held in San Francisco, USA, on December 10, and has the potential to reduce power consumption across a wide range of applications, including AI servers and I...
Back to Newsroom