TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of a new series of silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs), the N-series of 1200V SiC-MOSFETs in a TO-247-4 package,1 which achieves 30% less switching loss compared to the existing TO-247-3 package2 products. The new series will help to reduce the power consumption and physical size of power-supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers and photovoltaic power systems. Sample shipments will start this November.
1 Separates the driver-source-terminal from the power-source-terminal, unlike conventional 3-pin packages
2 Mitsubishi Electric press release on June 16, 2020: https://www.MitsubishiElectric.com/news/2020/0616.html
1) Four-pin package helps reduce power consumption and physical size of power-supply systems
- SiC-MOSFET chip with good figure of merit (FOM3) of 1,450mΩ-nC and high self-turn-on tolerance is mounted on TO-247-4 package, which is equipped with independent driver source terminal as well as conventional 3-pin package.
- Adopts four-pin package to reduce parasitic inductance, a problem in high-speed switching. Eliminating gate-source voltage drops due to current variations helps to reduce switching loss by approximately 30% compared with TO-247-3 products.
- Using a higher carrier frequency4 to drive the new power semiconductors helps to reduce switching-power loss, enabling smaller and simpler cooling systems as well as smaller reactors and other peripheral components, thereby helping to reduce the power consumption and physical size of overall power-supply systems.
3 Performance index of power MOSFETs, calculated by multiplying on-resistance by gate-drain charge (100°C junction temperature). Smaller values indicate better performance.
4 Frequency that determines the ON/OFF timing of switching element in inverter circuit
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