TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip for industrial use. The low power loss characteristics and high carrier frequency operation1 of the SiC-MOSFET (metal oxide semiconductor field-effect transistor) and SiC-SBD (schottky barrier diode) chips in the modules are expected to facilitate the development of more efficient, smaller and lighter weight power equipment in various industrial fields. Sales will start in January, 2021.
1 Frequency that determines the ON/OFF timing of the switching element in an inverter circuit
1) Will facilitate more power-efficient, smaller and lighter industrial equipment
- Junction field-effect transistor (JFET) doping technology2 reduces on-resistance by about 15% compared to that of conventional SiC products3.
- Reducing mirror capacitance4 enables fast switching and reduces switching loss.
- Built-in SiC-MOSFET and SiC-SBD help to reduce power loss by approximately 70% compared to that of Mitsubishi Electric’s conventional Si-IGBT modules.
Power loss reduction and high carrier frequency operation will facilitate development of smaller and lighter external components, such as reactors and coolers.
2 Increases device density by increasing impurity density in JFET area
3 Mitsubishi Electric’s first-generation SiC modules (with same rating) for industrial use
4 Stray capacitance between gate and drain existing in MOSFET structure (Crss) that affects switching time
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