2019 Report on 200V EPC2112 eGaN HEMT with Monolithic Optimized Gate Driver - ResearchAndMarkets.com

DUBLIN--(BUSINESS WIRE)--The "200V EPC2112 eGaN® HEMT with Monolithic Optimized Gate Driver" report has been added to ResearchAndMarkets.com's offering.

This report includes a technology and cost comparison of this unique EPC2112 device with the monolithic GaN solution proposed by Navitas. Finally, this report provides a comparison of EPC2112 with the previous 200V EPC GaN device, the EPC2010. This comparison highlights the differences in die design and their impact on production cost.

GaN devices are penetrating confidently into different applications: for example, wall chargers and LiDAR applications, which are high-end solutions that take full benefit of high-frequency switching in GaN power devices. According to Yole Dveloppement's the GaN power business will reach around $423M by 2023, with a compound annual growth rate (CAGR) of 93%.

The author proposes a complete reverse costing of the EPC2112, the first monolithically integrated HEMT from Efficient Power Conversion (EPC). The device is an enhancement-mode gallium-nitride (eGaN) single Field Effect Transistor (FET) with a Gate Driver Integrated Circuit (IC). It is adapted for High-Frequency DC-DC conversion and Wireless Power applications.

This new Integrated Gate Driver eGaN IC design consists of a 40-m, 200V eGaN power transistor and an optimized gate driver in a low inductance surface mount Ball Grid Array (BGA) package. Compared with their silicon counterparts, GaN transistors have significantly lowered capacitance. This translates into lowered switching losses at higher frequencies for the same on-resistance and voltage rating. Besides this, EPC's chip-scale packaging significantly reduces its final device costs, bringing a competitive advantage not only with competitors in GaN but also with silicon. Based on a complete teardown analysis, this report provides a detailed manufacturing cost analysis of the die and the package as well as the estimated selling price of the device.

Key Topics Covered:

1. Overview/Introduction

• Executive Summary
• Market
• Reverse Costing Methodology
• Glossary

2. Company Profile and Supply Chain

• EPC Profile
• EPC GaN Products

3. Physical Analysis

• Methodology
• Summary of the Physical Analysis
• Package Analysis
• Package opening
• Package cross-section
• Die: IC Gate Driver
• Die view and dimensions
• Die cross-section
• Die process
• Die process characteristics
• Die: HEMT
• Die view and dimensions
• Die cross-section
• Die process
• Die process characteristics

4. Manufacturing Process Flow

• Die Front-End Fabrication Unit
• Die Front-End Process Flow
• Final Test and Packaging Fabrication Unit
• Die Back-End Process Flow

5. Cost Analysis

• Summary of the Cost Analysis
• Yield Explanations and Hypotheses
• Device Cost
• Wafer front-end cost
• Wafer front-end cost per step
• Packaging cost
• Die cost
• Die back-end probe test and dicing cost
• Component cost

6. Price Analysis

• Definition of Prices
• Estimation of Selling Price

7. Comparison

• Comparison Between EPC's and Navitas Monolithic HEMT
• Comparison Between 200V EPC's devices: EPC2112 and EPC2010

For more information about this report, visit https://www.researchandmarkets.com/r/2c27ve.