EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces successful AEC Q101 qualification of the 15 V EPC2216 designed for lidar applications where increased accuracy is vital such as in self-driving cars and other time-of-flight (TOF) applications, including facial recognition, warehouse automation, drones and mapping.
The EPC2216, an 15 V, 26 mΩ, eGaN FET with a 28 A pulsed current rating in a tiny 1.02 mm2 footprint, is perfectly suited to use for firing the lasers in lidar systems because the FET can be triggered to create high-current with extremely short pulse widths. The short pulse width leads to higher resolution, and the tiny size and low cost, make eGaN FETs ideal for time-of-flight applications from automotive to industrial, healthcare to smart advertising, gaming and security.
To complete AEC Q101 testing, EPC’s eGaN FETs underwent rigorous environmental and bias-stress testing, including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests. Of note is that EPC’s WLCS packaging passed all the same testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability. These eGaN devices are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.
EPC’s CEO and co-founder Alex Lidow notes, “This new automotive product joins a rapidly expanding family of EPC transistors and integrated circuits designed to enable autonomous driving and improve resolution are reduce cost in all time-of-flight applications.”
Price and Availability
The EPC2216 eGaN FET is priced at 2.5Ku/reel at $0.532 each and is available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.
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