DUBLIN--(BUSINESS WIRE)--The "Global RF GaN (Radio-frequency Gallium Nitride) Market Size, Share, Trends - Segmented by Material (GaN-on-Sic and GaN-on-Silicon), Application, and Region - Growth, Trends, and Forecast (2018 - 2023)" report has been added to ResearchAndMarkets.com's offering.
The Radio-Frequency Gallium Nitride Market (RF GaN Market) was valued at USD 406.2 million in 2017, and it is expected to reach USD 1,075 million by 2023, at a CAGR of 17.5%, during the forecast period (2018-2023).
Increasing adoption of electric vehicles and transition toward 5G are the primary factors driving the growth of the global RF GaN market. The RF GaN market is also expected to experience a significant growth, over the forecast period, due to the increasing demand for power electronics that consume less power and are energy efficient.
GaN possess dynamic electrical and chemical properties, such as high-voltage breakdown and saturation velocity, which makes them the apt choice for use in a variety of switching devices. However, issues related to the high cost of raw materials and production processes are expected to challenge the growth of the RF GaN market.
The Aerospace & Defense Sector to Offer Many Growth Opportunities
Modernization of defense equipment has created the need for high-power semiconductor devices, such as GaN RF devices. ICs used in radar boards incorporate GaN that enables efficient navigation, facilitate collision avoidance, and enable real-time air traffic control.
The RF power amplifiers used in the radar systems are low on power and performance. The bandwidth performance and efficiency of GaN-based RF power amplifiers are higher than that of silicon-based RF power amplifiers. As GaN is more powerful than Si, GaN-based RF amplifiers used in the radars deliver higher performance, in terms of power and radar range.
This reduces the number of radar systems required to monitor the same perimeter, thereby cutting the cost. Thus, the demand for GaN RF devices is expected to increase in the defense sector, during the forecast period.
Moreover, increasing focus of the Europe Space Agency (ESA) on the increased usage of GaN across space projects and GaN-based transistors in the military and defense sectors will further aid the RF GaN market to expand, over the forecast period.
Topics Covered
1. Introduction
2. Research Methodology
3. Executive Summary
4. RF GaN Market Insights
4.1 RF GaN Market Overview
4.2 Porter's Five Forces Analysis
4.3 Industry Value Chain Analysis
4.4 Technology Roadmap
5. RF GaN Market Dynamics
5.1 RF GaN Market Drivers
5.1.1 Proliferation of IoT and Smart Cities
5.1.2 Proliferation of Electric Vehicles and Power Electronics
5.1.3 Growing Transition toward 5G Implementation
5.2 RF GaN Market Restraints
5.2.1 High Cost of Raw Materials and Production Processes
6. Global RF GaN Market - Segmentation
6.1 By Material
6.1.1 GaN-on-SiC
6.1.2 GaN-on-Silicon
6.1.3 Other Materials
6.2 By Application
6.2.1 Wireless Infrastructure
6.2.2 Aerospace and Defense
6.2.3 Community Access Television (CATV)
6.2.4 Satellite Communication
6.2.5 Other Applications
6.3 By Region
6.3.1 North America RF GaN Market Share (2018-2023)
6.3.2 Europe RF GaN Market Share (2018-2023)
6.3.3 Asia-Pacific RF GaN Market Share (2018-2023)
6.3.4 Latin America RF GaN Market Share (2018-2023)
6.3.5 Middle East & Africa RF GaN Market Share (2018-2023)
7. Competitive Intelligence - Company Profiles
7.1 Sumitomo Electric Industries Ltd.
7.2 RFHIC Corporation
7.3 Aethercomm Inc.
7.4 Analog Devices Inc.
7.5 Cree Inc.
7.6 GaN Systems Inc.
7.7 Integra Technologies Inc.
7.8 M/A-COM Technology Solutions Holdings Inc.
7.9 Microsemi Corporation
7.10 Mitsubishi Electric Corporation
7.11 NXP Semiconductors N.V.
7.12 Qorvo Inc.
7.13 STMicroelectronics N.V.
7.14 Toshiba Corporation
List Not Exhaustive
8. Investment Analysis
9. Future of the Global RF GaN Market
For more information about this report visit https://www.researchandmarkets.com/research/4h9955/global_rf_gan?w=4
