Efficient Power Conversion (EPC) Publishes Reliability Report Documenting over 17 Billion Field-Device Hours with Very Low Failure Rate

EPC Phase Seven Reliability Report shows that eGaN® FETs have solid reliability and are dependable replacement solutions to traditional silicon devices

EL SEGUNDO, Calif.--()--EPC announces its Phase Seven Reliability Report showing the distribution of over 17 billion accumulated field-device hours and detailing test data from more than 7 million equivalent device-hours under stress. The stress tests included intermittent operating life (IOL), early life failure rate (ELFR), humidity with bias, temperature cycling, and electrostatic discharge. The study reports a composite 0.24 FIT rate for products in the field, which is consistent with all of EPC’s in situ evaluations to date and validates the readiness of eGaN FETs to supplant their aging silicon cousins for commercial power switching applications.

According to Dr. Alex Lidow, CEO and co-founder of EPC, “Demonstration of the reliability of new technology is a major challenge and one that EPC takes very seriously. The results of this study show that EPC gallium nitride products have the requisite reliability to displace silicon as the technology of choice for semiconductors.”

For this report, EPC’s eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. eGaN FETs were stressed to meet the latest JEDEC standards, when possible. The tests included:

  • High Temperature Reverse Bias (HTRB)
  • High Temperature Gate Bias (HTGB)
  • Temperature Cycling (TC)
  • High Temperature High Humidity Bias (H3TRB)
  • Early Life Failure Rate (ELFR) HTRB
  • Intermittent Operating Life (IOL)
                       

Stress Test

     

Sample

Quantity

     

Fail

Quantity

     

Equivalent

Device (1000 hrs)

     

Notes

HTRB       1754       0       2755.0      

VDS = 80% VDS(max)

HTGB       1694       0       2695.0      

VGS ≥ 5.5 V

TC       630       0       707.0      

First 1000 cycles, ΔT ≥ 100°C

H3TRB       450       0       450.0      

ELFR HTRB       5966       0       286.4       First 48 hrs
IOL       385       0       138.6       NA

All Tests

     

10879

     

0

     

7032.0

     

 

EPC’s extensive reliability testing continues to show that the devices are both intrinsically and environmentally reliable. All seven phases of the reliability test program are available at epc-co.com.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Contacts

Efficient Power Conversion
Joe Engle, 310-986-0350
joe.engle@epc-co.com

Release Summary

EPC Phase Seven Reliability Report, documenting over 17 billion field-device hours with very low failure rate, shows eGaN FETs are dependable replacement solutions to silicon devices.

Contacts

Efficient Power Conversion
Joe Engle, 310-986-0350
joe.engle@epc-co.com