DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed C3M900V SiC MOSFET: Structure and Cost Analysis" report to their offering.
The SiC C3M Platform is the first 900V SiC MOSFET platform, designed by Wolfspeed for high-power applications like renewable energy, DC/DC converters, and telecom power supplies. Compared with previous-generation SiC MOSFETs, this third generation allows for a smaller device, higher current density, and lower on-resistance for the same current. The SiC C3M Platform proposes devices competitive with the latest SJ MOSFETs and GaN HEMT in terms of cost and performance.
The SiC C3M Platform includes three devices at different currents, assembled in two packages. This report presents a deep analysis of the C3M0280090 device and an overview of C3M0120090D and C3M0065090D assembled in a TO220 package. Moreover, this report studies the potential evolution of the device's cost over the next five years according to technology and market trends.
Also included is a comparison with previous Cree SiC MOSFET generations and a cost comparison with Infineon's Si SJ MOSFET and GaN Systems' GaN HEMT.
Key Topics Covered:
- Detailed Photos
- Precise Measurements
- Material Analysis
- Manufacturing Process Flow
- Supply Chain Evaluation
- Manufacturing Cost Analysis
- Selling Price Estimation
- Comparison with Capacitive Fingerprint Sensor
For more information about this report visit https://www.researchandmarkets.com/research/lp75fq/wolfspeed_c3m900v
