DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis" report to their offering.
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
Key Topics Covered:
- Detailed Photos
- Precise Measurements
- Material Analysis
- Manufacturing Process Flow
- Supply Chain Evaluation
- Manufacturing Cost Analysis
- Selling Price Estimation
- Comparison with Capacitive Fingerprint Sensor
For more information about this report visit https://www.researchandmarkets.com/research/rv2t8x/rohm
