DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Global Next Generation Memory Market 2017-2021" report to their offering.
The global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.
The report, Global Next Generation Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.
One trend in market is growing emergence of new FeRAM design using CMOS processes. Researchers have designed flexible FeRAM devices using state-of-the-art CMOS processes that involve sputtering, photolithography, and reactive ion etching. Their research led to a reduction in the gap between a rigid, inflexible semiconductor, which has high integration density, performance, and yield, and highly flexible polymer/hybrid materials that are low-performance electronics. To reduce the thickness of traditional silicon wafers and make electronics flexible, researchers used the existing standard CMOS fabrication processes.
Key vendors
- Cypress Semiconductor
- Fujitsu
- Intel
- IBM
- Micron Technology
- ROHM Semiconductor
- Samsung Electronics
- Texas Instruments
-
Toshiba
Other prominent vendors
- Adesto Technologies
- Crossbar
-
Everspin Technologies
Key Topics Covered:
PART 01: Executive summary
PART 02: Scope of the report
PART 03: Research Methodology
PART 04: Introduction
- Key market highlights
PART 05: Emerging memory technologies
PART 06: Supply chain
PART 07: Market landscape
PART 08: Market segmentation by product
PART 09: Market segmentation by application
PART 10: Geographical segmentation
PART 11: Decision framework
PART 12: Drivers and challenges
PART 13: Market trends
PART 14: Vendor landscape
PART 15: Key vendor analysis
PART 16: Appendix
For more information about this report visit http://www.researchandmarkets.com/research/llcsvj/global_next