SEATTLE & HILLSBORO, Ore.--(BUSINESS WIRE)--TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF solutions supplier and technology innovator, today announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.
James L. Klein, Vice President and General Manager for Infrastructure and Defense Products, remarked that GaN’s performance advantages are now more accessible to RF manufacturers thanks to TriQuint’s expansion of process and product solutions.
“This announcement shows the accelerated pace of TriQuint innovation. Customers have access to more world-class products in addition to three GaN processes supported by packaging, assembly and test services. TriQuint is comprehensively addressing the most demanding RF requirements with the flexibility to engage customers of all sizes.”
Noted researcher Strategy Analytics foresees significant GaN growth. “While defense remains the largest GaN revenue source, infrastructure is growing fast. Sat-Com, power and CATV are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a CAAGR of over 34% to approximately $186M by 2015,” said Eric Higham, Director of Semiconductor Practice.
TriQuint GaN innovation at IMS / MTT-S
TriQuint’s original quarter-micron process is now complemented by a high voltage variant, TQGaN25HV. The new process extends the drain operating voltage of 0.25-micron gallium nitride to 48V while delivering higher breakdown voltage, greater power density and high gain for DC-10 GHz applications. These advantages enable more rugged devices that can withstand VSWR mismatches that might destroy other circuits while delivering more RF output power. A new TriQuint product designed with this process is T1G4012036-FS/FL, a 120W packaged transistor for radar and infrastructure. It is nearly two-thirds smaller than similar LDMOS devices. Additional products built with TQGaN25HV are now available.
TriQuint has taken GaN technology to new limits with its third process, TQGaN15. It pushes the frequency range of gallium nitride to 40 GHz while delivering high power density and low-noise performance. This 0.15-micron GaN on SiC process was used to create TriQuint’s new TGA2594 (4W) and TGA2595 (10W) Ka-band VSAT ground terminal amplifiers. They have up to 35% PAE and are three times smaller than comparable gallium arsenide (GaAs) solutions. Additional products built using TQGaN15 are now available.
TriQuint’s product portfolio of new GaN solutions also includes the ground-breaking TAT9988 direct-to-board MMIC amplifier for CATV and fiber to the home (FTTH) optic networks. It was created with the second-generation of TriQuint’s original TQGaN25 process. The TAT9988 leads the industry in gain, composite distortion performance and surface mount convenience.
TriQuint’s expanded range of GaN innovation is complimented by its integrated assembly services that include die-level device packaging, X-ray and testing. TriQuint is also a DoD-accredited ‘Trusted Source’ for GaN and GaAs, which includes post-processing test and packaging services.
Product Solutions Technical Details: Contact TriQuint for additional information.
Amplifiers
|
Frequency |
Saturated |
P1dB (Psat) / |
Gain | NF / PAE | Voltage / Current | Package | Part | ||||||||||||||||||
| Description |
Range (GHz) |
Power (W) |
OIP3 (dBm) |
(dB) | (dB) / (%) | (V / mA) | Style | Number | |||||||||||||||||
| GaN S-Band PA | 3 - 3.5 | 80 | (49) / -- | 22 | – / 55 | 28 / 125 | Die | TGA2814 | |||||||||||||||||
| GaN S-Band PA | 3 - 3.5 | 100 | (50) / -- | 22 | – / 55 | 28 / 150 | Die | TGA2813 | |||||||||||||||||
| GaN C/X-Band HPA | 6 - 12 | 30 | (45) / – | 30 | – / 30 | 25 / 1100 | Die | TGA2590 | |||||||||||||||||
| GaN X-Band PA | 9 - 10 | 20 | (43) / -- | 25 | – / 50 | 25 / 150 | Die | TGA2624 | |||||||||||||||||
| GaN X-Band PA | 9 - 10 | 30 | (45) / -- | 25 | – / 45 | 25 / 250 | Die | TGA2622 | |||||||||||||||||
| GaN X-Band PA | 9 - 10 | 60 | (48) / -- | 10 | – / 35 | 24 / 2400 | Die | TGA2312-FL | |||||||||||||||||
| GaN X-Band PA | 10 - 11 | 30 | (45) / -- | 25 | – / 45 | 25 / 250 | Die | TGA2623 | |||||||||||||||||
| GaN X-Band PA | 10 - 11 | 16 | (42) / -- | 25 | – / 45 | 25 / 150 | Die | TGA2625 | |||||||||||||||||
| GaN Ka-Band PA | 27 - 31 | 5 | (37) / -- | 19 | – / 30 | 20 / 280 | Die | TGA2594 | |||||||||||||||||
| GaN Ka-Band PA | 27 - 31 | 10 | (40) / -- | 17 | – / 25 | 20 / 560 | Die | TGA2595 | |||||||||||||||||
Driver Amplifier
| Frequency | Saturated | P1dB (Psat) / | Gain | NF / PAE | Voltage / Current | Package | Part | ||||||||||||||||||
| Description | Range (GHz) | Power (W) | OIP3 (dBm) | (dB) | (dB) / (%) | (V / mA) | Style | Number | |||||||||||||||||
| GaN 2W Driver PA | 2 - 6 | 2 | 33 / -- | 23 | -- / 30 | 25 / 170 | Die | TGA2597 | |||||||||||||||||
Low Noise Amplifiers
| Frequency | P1dB / IIP3 | Gain | NF | Voltage / Current | Package | Part | ||||||||||||||||
| Description | Range (GHz) | (dBm) | (dB) | (dB) | (V / mA) | Style | Number | |||||||||||||||
| GaN LNA | 2 - 6 | 25 | 25 | 1 | 10 / 100 | Die | TGA2611 | |||||||||||||||
| GaN LNA | 6 - 12 | 25 | 25 | 1.5 | 10 / 100 | Die | TGA2612 | |||||||||||||||
Discrete RF Power Transistors
| Frequency | P1dB (Psat) | Gain | DE | Voltage / Current | Package | Part | ||||||||||||||||
| Description | Range (GHz) | (dBm) | (dB) | (%) | (V / mA) | Style | Number | |||||||||||||||
| GaN 120W: EAR99 | DC - 3.5 | 120 | 13 | 52 | 36 / 360 | Ceramic | T1G4012036-FS / -FL | |||||||||||||||
| GaN 10W: EAR99 | DC - 6 | 40 | 16 | 53 | 32 / 50 | 5x5 QFN | T1G6001032-SM | |||||||||||||||
TriQuint will detail advances of its GaN product and process solutions in Booth 530 on June 4 and 5 at 11:00AM and 1:00PM each day. Hear about TriQuint’s 15 new GaN products, new foundry services and its ‘Trusted Source’ DoD-accredited programs. Contact TriQuint to arrange a meeting. Register to receive product updates and TriQuint’s newsletter.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press release contains forward-looking statements made pursuant to the Safe Harbor provisions of the Private Securities Litigation Reform Act of 1995. Readers are cautioned that forward-looking statements involve risks and uncertainties. The cautionary statements made in this press release should be read as being applicable to all related statements wherever they appear. Statements containing such words as ‘leading’, ‘exceptional’, ‘high efficiency’, ‘key role’, ‘leading supplier’, or similar terms are considered to contain uncertainty and are forward-looking statements. A number of factors affect TriQuint’s operating results and could cause its actual future results to differ materially from any results indicated in this press release or in any other forward-looking statements made by, or on behalf of, TriQuint including, but not limited to: those associated with the unpredictability and volatility of customer acceptance of and demand for our products and technologies, the ability of our production facilities and those of our vendors to meet demand, the ability of our production facilities and those of our vendors to produce products with yields sufficient to maintain profitability, as well as the other “Risk Factors” set forth in TriQuint’s most recent 10-Q report filed with the Securities and Exchange Commission. This and other reports can be found on the SEC web site, www.sec.gov. A reader of this release should understand that these and other risks could cause actual results to differ materially from expectations expressed / implied in forward-looking statements.
FACTS ABOUT TRIQUINT
Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a leading global provider of innovative RF solutions and foundry services for the world’s top communications, defense and aerospace companies. People and organizations around the world need real-time, all-the-time connections; TriQuint products help reduce the cost and increase the performance of connected mobile devices and the networks that deliver critical voice, data and video communications. With the industry’s broadest technology portfolio, recognized R&D leadership, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies. The company has ISO9001-certified manufacturing facilities in the U.S., production in Costa Rica, and design centers in North America and Germany. For more information, visit www.triquint.com.
TriQuint: Reach Further, Reach Faster™
