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Qube Research & Technologies LTD UK Regulatory Announcement: Form 8.3

LONDON--(BUSINESS WIRE)--  FORM 8.3 PUBLIC OPENING POSITION DISCLOSURE/DEALING DISCLOSURE BY A PERSON WITH INTERESTS IN RELEVANT SECURITIES REPRESENTING 1% OR MORE Rule 8.3 of the Takeover Code (the “Code”) 1. KEY INFORMATION (a) Full name of discloser: Qube Research & Technologies Limited (b) Owner or controller of interests and short positions disclosed, if different from 1(a): The naming of nominee or vehicle companies is insufficient. For a trust, the trustee(s), settlor and beneficiari...
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R Systems Completes Acquisition of Novigo Solutions Expanding its Global Digital Engineering and AI Capabilities

GREATER NOIDA, India & EL DORADO HILLS, Calif.--(BUSINESS WIRE)--R Systems has successfully completed the acquisition of Novigo, which is now a subsidiary, as both organizations begin a structured integration phase....
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First Trust Global Funds PLC UK Regulatory Announcement: Net Asset Value(s)

LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Vest U.S. Equity Max Buffer UCITS ETF - September 11.12.2025 MSEP.LN IE0009DRFET8 150,002.00 USD 4,043,353.61 26.955  ...
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Qube Research & Technologies LTD UK Regulatory Announcement: Form 8.3

LONDON--(BUSINESS WIRE)--  FORM 8.3 PUBLIC OPENING POSITION DISCLOSURE/DEALING DISCLOSURE BY A PERSON WITH INTERESTS IN RELEVANT SECURITIES REPRESENTING 1% OR MORE Rule 8.3 of the Takeover Code (the “Code”) 1. KEY INFORMATION (a) Full name of discloser: Qube Research & Technologies Limited (b) Owner or controller of interests and short positions disclosed, if different from 1(a): The naming of nominee or vehicle companies is insufficient. For a trust, the trustee(s), settlor and beneficiari...
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First Trust Global Funds PLC UK Regulatory Announcement: Net Asset Value(s)

LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Rising Dividend Achievers UCITS ETF 11.12.2025 RDVY LN IE000K5F6EL4 525,002.00 USD 11,725,299.50 22.334  ...
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Kioxia entwickelt Kerntechnologie, die die praktische Umsetzung von hochdichten, stromsparenden 3D-DRAMs ermöglicht

TOKIO--(BUSINESS WIRE)--Kioxia Corporation, ein weltweit führender Anbieter von Speicherlösungen, gab heute die Entwicklung hochstapelbarer Oxid-Halbleiter-Kanal-Transistoren bekannt, die die praktische Umsetzung von hochdichten, stromsparenden 3D-DRAMs ermöglichen. Diese Technologie wurde am 10. Dezember auf der IEEE International Electron Devices Meeting (IEDM) in San Francisco, USA, vorgestellt und hat das Potenzial, den Stromverbrauch in einer Vielzahl von Anwendungen, darunter KI-Server un...
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Qube Research & Technologies LTD UK Regulatory Announcement: Form 8.3

LONDON--(BUSINESS WIRE)--  FORM 8.3 PUBLIC OPENING POSITION DISCLOSURE/DEALING DISCLOSURE BY A PERSON WITH INTERESTS IN RELEVANT SECURITIES REPRESENTING 1% OR MORE Rule 8.3 of the Takeover Code (the “Code”) 1. KEY INFORMATION (a) Full name of discloser: Qube Research & Technologies Limited (b) Owner or controller of interests and short positions disclosed, if different from 1(a): The naming of nominee or vehicle companies is insufficient. For a trust, the trustee(s), settlor and beneficiari...
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First Trust Global Funds PLC UK Regulatory Announcement: Net Asset Value(s)

LONDON--(BUSINESS WIRE)--  Funds Date TIDM ISIN Code Shares in Issue Currency Net Asset Value NAV/per Share First Trust Global Equity Income UCITS ETF 11.12.2025 GINC LN IE00BD842Y21 712,762.00 USD 41,143,224.48 57.724  ...
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Kioxia développe une technologie de base qui permettra la mise en œuvre pratique de DRAM 3D haute densité et basse consommation

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, leader mondial des solutions de mémoire, a annoncé aujourd’hui le développement de transistors à canal semi-conducteur à oxyde hautement empilables qui permettront la mise en œuvre pratique de DRAM 3D haute densité et basse consommation. Cette technologie a été présentée lors de l’IEEE International Electron Devices Meeting (IEDM) qui s’est tenu à San Francisco, aux États-Unis, le 10 décembre, et pourrait permettre de réduire la consommation d’énergie...
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Riassunto: Kioxia sviluppa una tecnologia fondamentale che consentirà l'implementazione pratica di memoria DRAM 3D ad alta densità e basso consumo energetico

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, azienda leader mondiale nelle soluzioni di memoria, oggi ha annunciato lo sviluppo di transistor a canale a semiconduttore di ossido altamente impilabili che consentiranno l'implementazione pratica di memoria DRAM 3D ad alta densità e basso consumo energetico. Questa tecnologia è stata presentata al IEEE International Electron Devices Meeting (IEDM) che si è svolto a San Francisco, USA, il 10 dicembre, e che potenzialmente riduce il consumo energetico...