Research and Markets: Infineon's Semikron SKiM306GD12E4 Reverse Costing Analysis

DUBLIN--()--Research and Markets (http://www.researchandmarkets.com/research/5v5djp/semikron) has announced the addition of the "Semikron SKiM306GD12E4 - Reverse Costing Analysis" report to their offering.

The SKiM306GD12E4 is a 1200V 300A 6-pack configuration with 3 separated half bridges for high reliability operation.

Semikron uses silver sinter technology to increase the durability and pressure contact to obtain a solderless power module.

The SKiM306GD12E4 is based on IGBT4 technology from Infineon and CAL4-F diode. Semikron has designed the CAL4-F diode to be very efficient with the IGBT4. The diode has been designed to obtain a good resistance to environment in a non hermetic package and benefits from the expertise of Semikron in the irradiation to reduce the carrier lifetime.

The SKIM 63 module is a no baseplate design. The DBC substrates are directly assembled on the heatsink to enhance the power management and reduce the height of the module.

The sinter layer is very thin to decrease the thermal resistance and limit the cost of silver material. With a cost close to a classic SAC solder, the sintered joint increases the service life.

The report presents a deep technology analysis of the packaging and of the transistors and diodes structures.

It also includes production cost analysis and an overall comparison with Infineon FS100R12PT4 1200V 100A.

Key Topics Covered:

1. Introduction

2. Companies Profile

3. Physical Analysis

- Physical Analysis Methodology

- Package

- View and dimensions

- Housing

- Base Plate Cross-Section

- DBC Cross-Section

- SKIM 63 Module

- IGBT Die

- Dimension

- Gate Supply Line

- Guard Ring

- Trench Gate Cross-Section

- Revelation

- Infineon IGBT4 vs IGBT3

- Diode Die

- Dimension

- Guard Ring

- Revelation

4. Manufacturing Process Flow

- Overview

- IGBT and Diode Process Flow

- Description of the Wafer Fabrication Units

- IGBT Process Flow

- Diode Process Flow

- Package Process Flow

5. Cost Analysis

- Main steps of economic analysis

- Yields Hypotheses

- Cost Analysis IGBT

- Wafer Cost Hypothesis

- IGBT Wafer Cost

- Breakdown per process step

- IGBT Probe Cost

- IGBT Die cost

- Cost Analysis Diode

- Cost Analysis SKiM306GD12E4

- Assessing BOM

- DBC Cost

- SKiM306GD12E4 Module Cost

- Yield Synthesis

6. Price Estimation

- Comparison SKiM306GD12E4 and Infineon FS100R12PT4

For more information visit http://www.researchandmarkets.com/research/5v5djp/semikron

Contacts

Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com
For E.S.T Office Hours Call 1-917-300-0470
For U.S./CAN Toll Free Call 1-800-526-8630
For GMT Office Hours Call +353-1-416-8900
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Sector: Power

Contacts

Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com
For E.S.T Office Hours Call 1-917-300-0470
For U.S./CAN Toll Free Call 1-800-526-8630
For GMT Office Hours Call +353-1-416-8900
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Sector: Power