EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2016 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors.
The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and high frequency circuits.
“The EPC2016 is an excellent complement to our existing family of eGaN FETs. The lower gate charge and output capacitances significantly reduce the switching losses in power conversion applications,” noted Alex Lidow, co-founder and CEO.
Additionally, the EPC9010 development board, featuring the EPC2016 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Development boards support designers in evaluating and incorporating eGaN FETs into their power conversion systems.
In 1k piece quantities, the EPC2016 is priced at $1.61 and is immediately available through Digi-Key Corporation
Design Information and Support for eGaN FETs:
- EPC2016 Datasheet at http://epc-co.com/epc/Products/eGaNFETs/EPC2016.aspx
- EPC9010 Quick Start Guide at http://epc-co.com/epc/Products/DemoBoards/EPC9010.aspx
- eGaN FET Product Portfolio at http://epc-co.com/epc/Products/eGaNFETs.aspx
- Application Notes and White Papers available for download in the GaN Library at http://epc-co.com/epc/GaNLibrary.aspx
Table 1 – Summary of EPC2016 Specification Ratings
|Package (mm)||LGA 2.1x 1.6|
|RoHS and Halogen Free||Yes|
|Max RDS(ON) @5VGS||16|
|QG typ (nC)||3.8|
|QG max (nC)||5.2|
|QGS typ (nC)||0.99|
|QGS max (nC)||1.5|
|QGD typ (nC)||0.70|
|QGD max (nC)||1.4|
|QOSS typ (nC)||20|
|QOSS max (nC)||30|
|ID (A) Pulsed||45|
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com
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