BIEL, Switzerland--(BUSINESS WIRE)--IXYS Corporation (NASDAQ: IXYS), a leader in power semiconductors and integrated circuit technologies for energy efficient products used in power conversion and motor control applications, announced today a new Anode Gated Thyristor (AGT) Technology Platform.
The first product derived from this new Technology Platform is the CLB30I1200HB, a 30 ampere, 1200 volt single thyristor in a TO-247 discrete package. The gate control of the CLB30I1200HB is connected to the anode side of the silicon die instead of to the cathode side, as done in a standard thyristor.
The combination of the Anode Gated Thyristor (AGT) together with a standard thyristor, e.g. the CLA30E1200HB, gives several interesting configurations. Thyristor phase-leg configurations normally contain two separated gate driver potentials, but by replacing one thyristor with the AGT, it will reduce to only one gate driver potential. This will save one complete gate driver circuit. Also an AC switch configuration benefits from the AGT. Here the switch can be operated with only one gate drive circuit. This shows great cost saving possibilities by reducing the gate drive component count. Therefore it will also have a positive impact on the Mean Time To Failure (MTTF) in the final application.
The AGT platform has similar electrical specification as the standard thyristor and is not limited to the 1200V/30A ratings of the CLB30I1200HB. In the future, various die sizes with higher and lower current/voltage ratings are planned to complete the AGT product portfolio. This new Thyristor Platform is made possible by IXYS’ known and proven thyristor technologies and in-house production methods.
Several applications are targeted by the Anode Gated Thyristor for example: line rectifying, soft-starters, motor control, AC power/lighting and temperature control. Generally, power control applications that use TRIACs, or thyristors are ideal for the use of this AGT, with simplified design and better performance.
The CLB30I1200HB and CLA30E1200HB discrete thyristors are available in
production quantities. For additional information, please contact your
local sales representative at:
http://www.ixys.com/SalesContacts.aspx or visit
http://ixapps.ixys.com/DataSheet/CLA30E1200HB.pdf for the datasheets.
About IXYS Corporation
Since its founding, IXYS Corporation has been developing power semiconductors and mixed signal ICs to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications. IXYS and its subsidiary companies offer a diversified product base that addresses worldwide needs for power control in the growing cleantech industries, renewable energy markets, telecommunications, medical devices, transportation applications, flexible displays and RF power.
Safe Harbor Statement
Any statements contained in this press release that are not statements of historical fact, including the benefits, savings, efficiency, performance, features and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-Q for the quarter ended December 31, 2012. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.