Samsung Samples Industry’s First 16-Gigabyte Server Modules Based on DDR4 Memory Technology

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun sampling the industry’s first 16-gigabyte (GB) double data rate-4 (DDR4), registered dual inline memory modules (RDIMMs), designed for use in enterprise server systems.

“By launching these new high-density DDR4 modules, Samsung is embracing closer technical cooperation with key CPU and server companies for development of next-generation green IT systems”

“By launching these new high-density DDR4 modules, Samsung is embracing closer technical cooperation with key CPU and server companies for development of next-generation green IT systems,” said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. “Samsung will also aggressively move to establish the premium memory market for advanced applications including enterprise server systems and maintain the competitive edge for Samsung Green Memory products, while working on providing 20 nanometer (nm) class* based DDR4 DRAM in the future.”

Using 30nm-class* process technology, Samsung sampled new 8GB and 16GB DDR4 modules in June, in addition to providing them to major CPU and controller makers. The modules will bring the highest density and performance levels to premium enterprise server systems. Samsung previously introduced the industry’s first 30nm-class 2GB DDR4 module in December, 2010.

Employing new circuit architecture for computing systems, DDR4 technology boasts the highest performance among memory products available for today’s computing systems, which by next year will reach twice the current 1,600 megabits per second (Mbps) of DDR3 based modules. Also, by processing data far more efficiently at a mere 1.2 volts, Samsung’s DDR4 modules will reduce power consumption by approximately 40 percent compared to its predecessor DDR3 modules operating at 1.35V.

Samsung will keep working on completion of the JEDEC (Joint Electron Device Engineering Council) standardization of DDR4 technologies and product specifications, which is expected to be accomplished by August.

The company said it will work closely with its customers including server OEMs, as well as CPU and controller makers, to expand the market base for high-density DDR4 modules, of which it plans to begin volume production next year. It also is set to expand the overall premium memory market with its most advanced 20nm-class based DDR4 DRAM products, which will be available sometime next year at densities up to 32GB.

Samsung has been leading the advancement of DRAM technology ever since it developed the industry’s first DDR DRAM in 1997. In 2001, it introduced the first DDR2 DRAM, and in 2005, announced the first DDR3 using 80nm-class* technology.

For more information about Samsung Green memory, visit www.samsung.com/GreenMemory

About Samsung Electronics

Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2011 consolidated sales of US$143.1 billion. Employing approximately 206,000 people in 197 offices across 72 countries, the company operates two separate organizations to coordinate its nine independent business units: Digital Media & Communications, comprising Visual Display, Mobile Communications, Telecommunication Systems, Digital Appliances, IT Solutions, and Digital Imaging; and Device Solutions, consisting of Memory, System LSI and LED. Recognized for its industry-leading performance across a range of economic, environmental and social criteria, Samsung Electronics was named the world’s most sustainable technology company in the 2011 Dow Jones Sustainability Index. For more information, please visit www.samsung.com.

* Editors’ Note: 20nm-class means a process technology node somewhere between 20 and 29 nanometers, and 30nm-class means a process technology node somewhere between 30 and 39 nanometers, while 80nm-class means a process technology node somewhere between 80 and 89 nanometers.

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