SEOUL, South Korea--()--Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, announced today that it started producing embedded multi-chip package (eMCP) memory for use in the rapidly expanding market segment for entry- to mid-level smartphones. Samsung’s new eMCP solutions come in a wide range of densities, utilizing LPDDR2 (low power double-data-rate 2) DRAM made with 30 nanometer (nm) class* process technology and NAND flash memory using 20nm-class* technology.
“Samsung will further accelerate growth in the mobile device market as it extends the advanced memory segment by providing a more expansive line-up of eMCP solutions in 2012.”
“As the need is growing for more advanced software and increased data storage in smartphones and tablets, mobile device makers are expected to introduce embedded memory solutions throughout 2012 that offer higher performance and density,” said Myungho Kim, vice president of memory marketing, Device Solutions, Samsung Electronics. “Samsung will further accelerate growth in the mobile device market as it extends the advanced memory segment by providing a more expansive line-up of eMCP solutions in 2012.”
The new eMCP memory solutions will help entry- to mid-level smartphones deliver enhanced performance and longer battery life, while providing mobile handset developers with a simpler design process.
Samsung’s embedded MCP solutions are fabricated in packages that consist of a four gigabyte (GB) e-MMC™ (Embedded MultiMediaCard™) based on 20nm-class NAND flash memory for data storage, and a choice of 256 megabytes (MB), 512MBs or 768MBs of 30nm-class LPDDR2 DRAM for supporting high-performance mobile device systems. (Each is equivalent to 2Gb, 4Gb and 6Gb, respectively.)
The 30nm-class LPDDR2 DRAM chip in the new eMCPs performs a key role in enhancing the performance of entry- to mid-level smartphones with a data transmission speed of 1,066 megabits per second (Mbps), which doubles the performance of the industry’s previous mobile DRAM (MDDR). When compared to a 40nm-class* LPDDR2 DRAM, the new 30nm-class LPDDR2 DRAM increases performance by approximately 30 percent, while consuming 25 percent less power. Also, applying the 30nm-class process technology improves chip manufacturing productivity by 60 percent over 40nm-class technology.
Samsung began providing high-performance 30nm-class 4Gb LPDDR2 DRAM in March of last year. In October, Samsung came up with high-density solutions such as a 2GB LPDDR2 package that stacks four 4Gb LPDDR2 DRAM and also first started using 30nm-class LPDDR2 DRAMs for eMCPs. Focusing on the high-end smartphone market, Samsung’s previous eMCPs combined 1GB of 30nm-class LPDDR2 DRAM with 32GBs of eMMC memory using 20nm-class NAND flash.
For more information about Samsung memory solutions, visit www.samsung.com/GreenMemory.
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2010 consolidated sales of US$135.8 billion. Employing approximately 190,500 people in 206 offices across 68 countries, the company operates two separate organizations to coordinate its nine independent business units: Digital Media & Communications, comprising Visual Display, Mobile Communications, Telecommunication Systems, Digital Appliances, IT Solutions, and Digital Imaging; and Device Solutions, consisting of Memory, System LSI and LCD. Recognized for its industry-leading performance across a range of economic, environmental and social criteria, Samsung Electronics was named the world’s most sustainable technology company in the 2011 Dow Jones Sustainability Index. For more information, please visit www.samsung.com.
* Editors’ Note: 20nm-class means a process technology node somewhere between 20 and 29 nanometers and 30nm-class means a process technology node somewhere between 30 and 39 nanometers, while 40nm-class means a process technology node somewhere between 40 and 49 nanometers.