TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO:6503) announced today that it will begin shipping samples of its 100Gbps (53Gbaud) four-level pulse-amplitude modulation (PAM4) electro-absorption modulator (EML) laser diode chip for coarse wavelength division multiplexing (CWDM) on November 1. The semiconductor diode is expected to be applied in sets of four EML chips as a light source in optical transceivers for 400Gbps optical fiber communication in data centers. Thanks to the new EML’s operability in a wider range of temperatures, it will help to lower the power consumption and costs of optical transceivers by eliminating the need for conventional temperature-control units.
1) High-speed, wider-temperature operation with unique hybrid waveguide structure
- Unique hybrid waveguide structure (Fig. 1) combines a buried heterostructure laser diode for high optical-output-power and a high-mesa waveguide electro absorption modulator (EAM) for a high extinction ratio and wide frequency range.
- 53Gbaud PAM4 operation is available in temperatures ranging from 5 to 85°C (Fig. 2) due to optimized design parameters for the laser diode and modulator sections.
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