TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its N-series 1200V SiC-MOSFET (silicon-carbide metal-oxide-semiconductor field-effect transistor) featuring low power loss and high tolerance1 to self-turn-on. The new series will help to reduce the power consumption and miniaturize power supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers, photovoltaic power systems and more. Sample shipments will start this July.
Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.
1 Input capacitance/mirror capacitance (Ciss/Crss), as calculated by Mitsubishi Electric
1) Reduced power consumption and miniaturization of power-supply systems
- Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving an industry-leading2 figure of merit (FOM3) of 1,450mΩ・nC. Power consumption in power-supply systems is reduced by approximately 85% compared to using conventional Si-IGBTs.
- By reducing mirror capacitance4, self-turn-on tolerance improves by 14 times compared with competitor's products. Thus, fast switching operation can be realized and helps reduce switching loss.
- Reduced switching-power loss enables the downsizing and simplification of cooling systems as well as the downsizing of peripheral components, such as reactor by driving the power semiconductor with a higher carrier frequency5, thereby helping to reduce the cost and size of overall power-supply systems.
2 As of June 16, 2020 according to Mitsubishi Electric research
3 Performance index of Power MOSFET, calculated by multiplying the on-resistance by the gate-drain charge (100°C junction temperature). Smaller values indicate better performance
4 Stray capacitance between Gate and Drain existing in MOSFET structure (Crss)
5 Frequency that determines the ON/OFF timing of the switching element in an inverter circuit
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