2019 Study on Thermal Scanning Probe Lithography (tSPL): An Assessment of Current Trends, Technology Status, Strengths & Drawbacks, and Emerging Applications of tSPL at the Industrial Level - ResearchAndMarkets.com

DUBLIN--()--The "2019 Study on Thermal Scanning Probe Lithography (tSPL)" report has been added to ResearchAndMarkets.com's offering.

Scope

  • Technological highlights and market outlook of thermal scanning probe lithography (tSPL) as a mean to semiconductor miniaturization
  • Insight into the role of tSPL process in diverse industry sectors, including electronics and optoelectronics; chemistry, biochemistry and healthcare; sensors and actuators; energy; and fabrication of 3D structures on transparent substrates etc.
  • Summary of lithographic processes for creating electronic features using deposition technologies for ultrathin films
  • An assessment of current trends, technology status, strengths and drawbacks, and emerging applications of tSPL at the industrial level

New generations of electronic products, such as smartphones and wearable devices, are being confined in smaller and thinner packages and, consequently, integrated circuits (IC) are also becoming smaller in size while supporting a larger number of transistors to provide a greater number of features.

Continuing the process of miniaturization, the semiconductor industry is currently introducing integrated circuits based on transistors with 10 nm-node technology and below. A node is defined as half the distance between two identical features in adjacent transistors (also known as the IC half-pitch).

According to the latest International Technology Roadmap for Semiconductors (ITRS), issued in 2015, the target node range for logic devices reached 10-11 nanometers in 2017. These ICs are currently being fabricated by Samsung Electronics (Suwon, South Korea) and Taiwan Semiconductor Manufacturing Co. (TSMCO - Hsinchu, Taiwan) using a FinFET (FinFET is the acronym for Fin Field-effect Transistor) configuration. FinFET is a non-planar (i.e., three-dimensional) field effect transistor.

The next node, which started to be mass-produced in 2018, is 7-8 nm and is likely based on an LGAA (Lateral Gate All-around) configuration. By 2021, logic devices at the 5-6 nm nodes are projected to enter the market, and by then VGAA (Vertical Gate All-around) technology will be required to manufacture these devices.

LGAA and VGAA configurations are based on the use of horizontal and vertical nanowire arrays, respectively. Nanowires for LGAA transistors are being produced using top-down methods, whereas vertical nanowires for VGAA devices are being created using bottom-up techniques.

Therefore, as companies switch to the fabrication of devices below the 10-nm node, traditional processes used in semiconductor manufacturing will be gradually replaced by fabrication methods based on the utilization of nanostructures, such as nanowires and nanofilms, as well as processes that manipulate materials at the atomic and molecular scale.

Key Topics Covered

Chapter 1 Technology Highlights & Market Outlook

  • On-going Miniaturization & Nanoelectronics
  • Fabrication of Nanostructures
  • Scanning Probe Lithography
  • Current Technology Status & Strengths of Thermal Scanning Probe Lithography
  • Current and Emerging Applications
  • Technology Drawbacks
  • Competing Technologies
  • Market Outlook

List of Tables

Table 1: Deposition Technologies for Ultrathin Films, 2019

Table 2: Lithographic Methods, 2019

Table 3: Materials Processed, by Thermal Scanning Probe Lithography, 2019

Table 4: Current and Emerging Applications, 2019

Table 5: Global Market for Nanolithography Equipment, by Region, Through 2024

List of Figures

Figure 1: From Microelectronics to Nanoelectronics

Figure 2: Global Market Share for Nanolithography Equipment, by Region, 2024

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Contacts

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Related Topics: Semiconductor

Contacts

ResearchAndMarkets.com
Laura Wood, Senior Press Manager
press@researchandmarkets.com
For E.S.T Office Hours Call 1-917-300-0470
For U.S./CAN Toll Free Call 1-800-526-8630
For GMT Office Hours Call +353-1-416-8900
Related Topics: Semiconductor