EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces successful AEC Q101 qualification of two eGaN devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
eGaN technology has been in mass production for over eight years, accumulating billions of hours of successful field experience in automotive applications, such as LiDAR (Light Detection and Ranging) and radar for autonomous cars, 48 V – 12 V DC-DC converters, and high intensity headlamps for trucks. These are the first EPC products to have completed AEC Q101 qualification testing.
The EPC2202 is an 80 V, 16 mΩ enhancement-mode FET with a pulsed current rating of 75 A in a 2.1mm x 1.6mm chip-scale package. The EPC2203 is an 80 V, 73 mΩ part with a pulsed current rating of 18 A in a 0.9mm x 0.9mm chip-scale package. These eGaN FETs are many times smaller and achieve switching speeds 10 – 100 times faster than their silicon MOSFET counterparts. Both products are designed for a wide range of emerging automotive applications including:
- High Intensity Headlights
- 48 V – 12 V DC-DC Converters
- Ultra−high Fidelity Infotainment Systems
To complete AEC Q101 testing, EPC’s eGaN FETs underwent rigorous environmental and bias-stress testing, including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests. Of note is that EPC’s WLCS packaging passed all the same testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability. These eGaN devices are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.
EPC’s CEO and co-founder Alex Lidow notes, “This is just the beginning. These two initial automotive products will be followed by a constant stream of transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety. Our eGaN technology is faster, smaller, more efficient, and more reliable than the aging silicon power MOSFET used in today’s vehicles.”
Price and Availability
The EPC2202 eGaN FET is priced for 1K units at $1.57 each, while the EPC2203 is priced for 1K units at $0.44 each. Both products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.