TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation today announced "TC35680FSG” with built-in Flash ROM and "TC35681FSG," additions to its line-up of ICs compliant with the Bluetooth® low energy standard . Sample shipments start at the end of this month.
The new ICs support all data rates required for the high-speed features, 2M PHY and Coded PHY (500kbps and 125kbps) added to the Bluetooth® low energy Ver.5.0 standard. Receiver sensitivity at 125kbps is -105dBm, an industry-leading  level, and a built-in high efficiency power amplifier in the transmission block realizes up to +8 dBm transmission power. All these features contribute to long-range communication with low current consumption.
Based on an Arm® Cortex®-M0 processor, the new ICs incorporate a 256KB Mask ROM that supports Bluetooth® baseband process, and 144KB of RAM for processing Bluetooth® application programs and data.
Additionally, 18-port GPIOs, which can be set to 2 channels each for SPIs, I2C, and UART are also included as interfaces, allowing structuring of systems that connect to various peripheral devices. These GPIOs can be set for a wakeup function, 4-channel PWM, 5-channel AD converter interfaces, a control interface of an external amplifier (option) for long-range communication, and others.
"TC35680FSG" has 128KB of Flash ROM to use for storing user programs and various data in stand-alone operations, suiting it for diverse applications and removing the need for an external non-volatile memory in stand-alone operations. This also reduces the parts count, winning reductions in cost and mounting area.
"TC35681FSG" has no built-in Flash ROM and operates in combination with an external non-volatile memory or host processor. A wide operating range of -40° to +125°C makes it suitable for applications exposed to high temperatures.
The addition of the new products to its line-up ensures Toshiba Electronic Devices & Storage Corporation’s support for the integration of Bluetooth® low energy products into IoT devices, where recent years have seen growing demand for high-throughput and long-range communication. Delivering a line-up with a wide operating temperature range also allows application in industrial applications, and improves product value for users in many areas. The company plans to add a product line-up for automotive applications in the near future.
|Low power consumption:|
|11.0mA (transmission operation at 3.0V, output power: +8dBm, at 1Mbps)|
|5.1mA (receiver operation at 3.0V, at 1Mbps)|
|100nA or less (at 3.0V) in Deep Sleep|
|Receiver sensitivity: -94.5dBm(at 1Mbps), -105dBm (at 125kbps)|
|Transmission power: +8dBm to -40dBm|
|Supports Bluetooth® low energy Ver.5.0 central and peripheral devices|
|Built-in GATT (Generic Attribute Profile)|
|Supports servers and clients defined by GATT|
|Bluetooth® low energy Ver. 5.0 additional features |
|LE 2M PHY|
|LE Coded PHY (500kbps and 125kbps)|
|LE Advertising Extensions|
|LE Channel Selection Algorithm #2|
Built-in 128KB Flash ROM (only TC35680FSG)
・Applications that need long-range communication such as beacon tags, IoT devices and industry equipment.
|Supply voltage||1.9V to 3.6V||1.8V to 3.6V|
|Current consumption in TX operation||11.0 mA (3.0V operation; output power: +8dBm, at 1Mbps)|
|Current consumption in RX operation||5.1mA (3.0V operation, at 1Mbps)|
|Current consumption in Deep Sleep||100nA or less (3.0V)|
|Operating temperature range||-40 to +85°C||-40 to +125°C|
|Package||QFN40 5mm×5mm, 0.4mm pitch|
|Wireless communication||Bluetooth® low energy Ver.5.0 including central and peripheral functions|
|Transmitter output power||+8dBm to -40dBm (+8, +7, +6, +4, 0, -6, -20, -40dBm)|
|Receiver sensitivity||-94.5dBm(at 1Mbps), -105dBm (at 125kbps)|
|Profiles||HCI, GATT (Generic Attribute Profile), including server and client functions|
UART (2 channels), I2C (2 channels), SPI (2 channels),
General purpose ADC (5 channels)
User program function
Wake-up signal for host device
PWM function (4 channels)
: Low power consumption communication technology defined in Bluetooth® Ver.5.0.
: As of January 9, 2018, in the Bluetooth IC industry. Toshiba Electronic Devices & Storage Corporation survey.
: For details of features added to Ver.5.0, see the Bluetooth® core specifications.
* The Bluetooth® word mark and logos are registered
trademarks owned by the Bluetooth SIG, Inc.
* Arm and Cortex are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
* All other company names, product names, and service names mentioned herein may be trademarks of their respective companies.
For more information about the new products, please visit:
For more information about Toshiba Bluetooth® wireless technology ICs,
Mixed Signal IC Sales and Marketing Department
Sales and Marketing Group II
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since being spun off from Toshiba Corporation in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.
Our 19,000 employees around the world share a determination to maximize
the value of our products, and emphasize close collaboration with
customers to promote co-creation of value and new markets. We look
forward to building on annual sales now surpassing 700-billion yen (US$6
billion) and to contributing to a better future for people everywhere.
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