DUBLIN--(BUSINESS WIRE)--The "Insulated-Gate Bipolar Transistors (IGBTs) Market by Type, Power Rate, Application - Global Opportunity Analysis and Industry Forecast, 2014 - 2022" report has been added to Research and Markets' offering.
Insulated-Gate Bipolar Transistor (IGBT) is a three-terminal electronic switching device, which is a combination of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT) in monolithic form.
It allows the flow of power only when the gate terminal is connected to the positive supply of the source. Moreover, it is a minority-carrier device with several benefits such as large bipolar current-carrying capability and high input impedance. IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current.
In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.
IGBT is widely used in various applications such as renewable energy, High Voltage Direct Current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability.
Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth.
However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.
Key Topics Covered:
Chapter 1 Introduction
Chapter 2 Executive Summary
Chapter 3 Market Overview
Chapter 4 World Insulated Gate Bipolar Transistors (IGBTS) Market, By Type
Chapter 5 World Insulated Gate Bipolar Transistors (IGBTS) Market, By Power Rating
Chapter 6 World Insulated Gate Bipolar Transistors (IGBTS) Market, By Application
Chapter 7 World Insulated Gate Bipolar Transistors (IGBTS) Market, By Geography
Chapter 8 Company Profiles
- ABB Group
- STMicroelectronics NV
- Toshiba Corporation
- IXYS Corporation
- Renesas Electronics Corp
- Semikron International GmbH
- Mitsubishi Electric Corp
- Infineon Technologies AG
- Fuji Electric Co Ltd
- NXP Semiconductors NV
For more information about this report visit https://www.researchandmarkets.com/research/s5vmql/insulatedgate