EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.
The application demonstration videos posted are:
2017: Applications for GaN
At APEC 2017, the premier power conversion conference, EPC showcased more than 25 applications where GaN is Changing the Way We Live. In this video, Alex Lidow, CEO, takes the viewer on a tour of our booth, showing eGaN FETs and ICs in a wide range of applications including a 2 x 3 foot tabletop wirelessly powering multiple devices simultaneously.
the Cord! GaN-Based Wirelessly Powered Tabletop
In this video, EPC demonstrates a wireless power tabletop simultaneously powering a laptop, a video monitor, Google Home, Amazon Alexa, a desk lamp, and a cell phone. GaN is making possible wireless power not only for our phones, but also for our homes.
Today’s eGaN® FETs and ICs switch ten times faster than the aging power MOSFET. This high speed gives LiDAR (Light Distancing and Ranging) systems superior resolution, faster response time, and greater accuracy. This technology is rapidly gaining traction in applications where this increased accuracy is vital, such as autonomous vehicles and augmented reality systems.
V – 1.8 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
With its latest generation process, EPC has dealt another blow to the silicon MOSFET power element, bringing improved performance while decreasing the size and cost. This video shows a side-by-side comparison of a 100 V GaN FET outperforming a comparable MOSFET in a much smaller footprint with 30% less power loss and 3X the power density.
V – 12 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
EPC has dealt another blow to the silicon MOSFET power element, bringing improved performance while decreasing the size and cost. This video shows a side-by-side comparison of a 200 V GaN FET outperforming a comparable MOSFET in a much smaller footprint – 15X smaller – with 40% less power loss and 3X the power density.
In this video is an example of a 48 V, 10 A 3-phase GaN Inverter reference design from Texas Instruments using the LMG5200. The GaN solution has better thermal profiles where heat sinks can be eliminated and the lower inductance reduces size and weight. This reference design has an incredible efficiency rating of 98.5%!
According to Alex Lidow, CEO and co-founder of EPC, “This collection of short videos presents specific end-use applications currently enabled or enhanced by the high performance of gallium nitride FETs and ICs. These videos are designed to spark innovation in the use of GaN products by innovative, forward-thinking power system design engineers.”
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.