--(BUSINESS WIRE)--Spin Transfer Technologies, Inc.:
Barry Hoberman, CEO of Spin Transfer Technologies (STT), describes how ST-MRAM will enable a new tier of persistent memory —nanosecond-class persistent memories—during a panel session at this year’s Persistent Memory Summit. Today, most talk about persistent memory is around storage-class memories that create a new tier residing between DRAM and flash in terms of performance and cost. Spin Transfer Technologies believes that nanosecond-class persistent memories will combine the density and byte-addressability of DRAM with faster cycle times and persistence.
Mr. Hoberman will detail how this additional tier of nanosecond-class persistent memories provide the opportunity for improving performance, reducing power, and enabling new capabilities to systems and software.
Additionally, Spin Transfer Technologies will demonstrate its MRAM technology during the summit.
WHEN: January 18, 2017
WHERE: Westin Hotel — San Jose, California
About Spin Transfer Technologies
Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM™. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost and scalability to smaller lithographic dimensions. For more information, visit www.spintransfer.com.