MEDIA ADVISORY: Spin Transfer Technologies to Detail Advanced 20nm MRAM Milestones at SPIE Conference

FREMONT, Calif.--()--Spin Transfer Technologies, Inc.:

         

WHAT:

Chief Technology Officer Mustafa Pinarbasi of Spin Transfer Technologies (STT), developer of a proprietary Orthogonal Spin Transfer Magneto-Resistive Random Access MRAM technology (OST-MRAM™), will be presenting an invited paper at the SPIE Nanoscience and Engineering Conference. Dr. Pinarbasi will describe the capabilities of STT’s world-class R&D fab and present recent results on MRAM arrays and the development of proprietary perpendicular magnetic tunnel junctions (pMTJs) as small as 20nm. Additionally, a joint invited paper with New York University Professor Andrew Kent’s group will be discussing the time-resolved magnetization dynamics of orthogonal spin transfer devices.
 

WHEN:

August 29, 2016
 

WHERE:

San Diego Convention Center
 

Invited Papers:

  • Session 5a (MRAMs I) August 29, 2:20 p.m.:
    Time-resolved measurement of magnetization dynamics and reversal in orthogonal spin transfer devices (joint paper between NYU and Spin Transfer Technologies) [Room 30D]
  • Session 6a (MRAMs II) August 29, 4:25 p.m.:
    Performance of Co/Pt pinning-based perpendicular ST-MRAM arrays, presented by STT CTO Mustafa Pinarbasi [Room 30D]

About the conference: http://spie.org/conferences-and-exhibitions/optics-and-photonics

About Spin Transfer Technologies

Spin Transfer Technologies, Inc. was established by Allied Minds and New York University to develop and commercialize its Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology, OST-MRAM™. The technology, invented by Professor Andrew Kent, is a disruptive innovation in the field of spin-transfer-based MRAM devices, enabling faster switching times, lower power operation, lower manufactured device cost and scalability to smaller lithographic dimensions. For more information, visit www.spintransfer.com.

Contacts

The Hoffman Agency for Spin Transfer Technologies
Dylan McGrath, 415-300-5910
dmcgrath@hoffman.com

Release Summary

Spin Transfer Technologies CTO Mustafa Pinarbasi will detail progress on the company's MRAM technology development in an invited paper at the SPIE Nanoscience and Engineering Conference.

Contacts

The Hoffman Agency for Spin Transfer Technologies
Dylan McGrath, 415-300-5910
dmcgrath@hoffman.com