Mitsubishi Electric US Teams with NextGen RF to Accelerate Time to Market for Products Based on 7-Watt UHF Band Amplifiers

Evaluation Kit and Associated Reference Design Package Speeds Design Cycle Times

CYPRESS, Calif.--()--Mitsubishi Electric US, Inc. and NextGen RF Design, Inc. have joined forces to offer RF design engineers a 7W UHF band amplifier evaluation kit and associated reference design package (RD07 reference design kit) to help accelerate design cycle times. NextGen RF Design, Inc. developed and customized the RD07 reference design kit specifically for Mitsubishi Electric’s RD07MUS2B silicon RF (SiRF) transistor (RD07). The RD07 is a RoHS-compliant 7W MOSFET, which can be used as the final output stage prior to the antenna or, in higher power applications, as a high-efficiency driver. The RD07 serves as the transmitter backbone for a variety of mobile and portable communication devices.

The RD07 reference design kit will greatly simplify the design process for RF engineers. Its evaluation board (EVB) is tuned for the 400-470 MHz band at a 7.2V nominal drain supply voltage. In addition to the EVB, the RD07 reference design kit includes access to the EVB schematics, PCB layout files, bill-of-materials, a detailed application note, and RF characteristics report.

“The RD07 reference design kit offers RF engineers a comprehensive package that streamlines the design process and reduces design cycle times,” said Kyle Martin, vice president and general manager, Mitsubishi Electric US, Inc. Semiconductor Division. “Design engineers can readily integrate our parts along with all the surrounding bias and matching circuits by leveraging the schematics, layout files and bill of materials (BOM) supplied with the reference design.”

The RD07 supports many end applications in the land mobile radio (LMR) space, such as commercial two-way radios and mission-critical radios for public safety applications, including police, fire, ambulance, and disaster warning systems. The RD07 is also suitable in a variety of commercial applications dependent on reliable wireless communication, such as smart meters for the utility industry and railroad, marine, and airport radios for transportation markets.

Mitsubishi Electric US, Inc. and NextGen RF Design, Inc. are planning additional reference design kits, including a reference design kit for Mitsubishi Electric’s RD01MUS2B, which is commonly used as a driver for the RD07, and a multi-stage reference design kit supporting bands from VHF to 900MHz at both 3.6V and 7.2V supply voltages.

“We’re pleased to be working with Mitsubishi Electric US on the development of reference designs and application notes for Mitsubishi Electric’s RF MOSFET power transistors,” said David Mitchell, president, NextGen RF Design, Inc. “The evaluation board in the RD07 reference design kit showcases the RD07’s excellent broadband power and gain across the 400-470MHz frequency band, and the applications note that accompanies the evaluation board provides a wealth of information for engineers to help them quickly and effectively design the RD07 into their products.”

Additional information on the RD07 reference design kit (item number RDK-RD07MUS-4047-A), which currently sells for $249.00 plus applicable taxes, is available by contacting Mitsubishi Electric US Semiconductor Division at 714-252-7847 or

About NextGen RF Design, Inc.

NextGen RF Design was founded in 2008 as a collaboration of product design experts. The company specializes in providing wireless design expertise on a variety of products, ranging from design consultation to turnkey product development. NextGen RF is based in Waseca, Minnesota.

About Mitsubishi Electric US Semiconductor Division

Mitsubishi Electric US, Inc.’s Semiconductor Division offers a well-balanced portfolio of semiconductor and electronic devices that contributes to the advancement of information-processing and telecommunications. The division develops and manufactures next-generation optical devices that support today's rapidly evolving optical telecommunications networks, high-frequency Gallium Nitride, Gallium Arsenide, and Silicon RF devices that are used in everything from two-way radios to telecommunications satellites, and leading-edge TFT-LCD modules for industrial use. Additional information is available at

In addition to semiconductor devices, Mitsubishi Electric US group companies’ principal businesses include factory automation equipment, automotive electrical components, elevators and escalators, heating and cooling products, solar modules, electric utility products, and large-scale video displays for stadiums and arenas. Mitsubishi Electric group companies have roughly 50 locations throughout North America with approximately 4,000 employees.


Mitsubishi Electric US, Inc.
Kyle Martin, 714-229-3832

Release Summary

Mitsubishi Electric US, Inc. and NextGen RF Design, Inc. have joined forces to offer RF design engineers a 7W UHF band amplifier evaluation kit and associated reference design package (RD07 reference)


Mitsubishi Electric US, Inc.
Kyle Martin, 714-229-3832