ALBANY, N.Y.--(BUSINESS WIRE)--Transparency Market Research announces the release of a report titled “Next Generation Memory Technologies Market (Non-volatile and Volatile) - Global Industry Analysis, Market Size, Share, Growth, Trends and Forecast, 2013 - 2019”. The report indicates that the market for next generation memory technologies is likely to expand to a value of US$2,837.0 million in 2019, rising from US$207.8 million in 2012, presenting a remarkable CAGR of 46.1% between 2013 and 2019.
Segmenting the next generation memory technologies market on the basis of product type, interface, application, and geography, the research report provides in-depth understanding of and sharp insights into the various components of the global next generation memory technologies market. The numerous applications of next generation memory technologies include industrial and automotive, embedded MCU and smart card, mobile phones, cache memory and enterprise storage, and mass storage.
By product type, next generation memory technologies can be broadly categorized into volatile next generation memory technologies and non-volatile next generation memory technologies, the latter including CBRAM (Conductive Bridging RAM), FeRAM (Ferroelectric RAM), ReRAM (Resistive RAM), PCM (Phase-change memory), Racetrack, and MRAM (Magneto-resistive RAM).
The next generation memory technologies market is rather competitive and consists of a number of established players such as Winbond Electronics Corporation, Everspin Technologies, Inc., Samsung Electronics Co. Ltd., Avalanche Technology, Inc., Fujitsu Ltd., Crossbar Inc, Adesto Technologies Corporation Inc, Cypress Semiconductor Corporation, and Micron Technology, Inc.
The impressive sales of Fujitsu’s FeRAM technology enabled the company to lead the next generation memory technologies market in 2012. In the same year, Micron Technology headed PCM production and Everspin dominated the production of MRAM. On the basis of interface type, the next generation memory technologies market is divided into DDR, SAS, SATA, and PCIe and I2C.
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