Efficient Power Conversion (EPC) Experts Present Benchmark Performance with Gallium Nitride (GaN) Technology at the 2014 Darnell’s Energy Summit
EPC’s CEO and applications experts will conduct a half-day seminar and several technical presentations, including an invited plenary session presentation, on a multitude of applications enabled by this game-changing technology
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2014. The conference will be held in Richmond, Virginia, from September 23th through the 25th.
“Advances in DC-DC Converters With eGaN FETs”
This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.
Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN technology works. This session will discuss fundamental GaN technology and how to use these devices. To showcase their real-world value, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of gallium nitride – an emerging displacement technology for MOSFETs.
Technical Presentations by EPC Experts Featuring GaN FETs:
- Plenary Session
- Technical Sessions
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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