IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”
On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications
EL SEGUNDO, Calif.--(BUSINESS WIRE)--An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 PM (EDT).
Discrete GaN power devices offer superior hard-switching performance over MOSFETs and are crucial for the development of switching converters for envelope tracking. In this seminar, the latest family of high frequency enhancement-mode gallium nitride power transistors on silicon (eGaN® FETs) will be presented in a few multi-megahertz buck converters. The different system-level parasitics will be discussed and their impact evaluated based upon the experimental results.
The presenter will be Johan Strydom, EPC Vice President of Applications Engineering. Dr. Strydom is widely published in the industry, including being co-author of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.
Webinar Registration Information:
Title: Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck
Date: Wednesday, September 3, 2014
Time: 11:00 AM – 12:00 PM (EDT)
Fee: Free of Charge
About IEEE Power Electronics Society (PELS)
The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control and condition of electric power.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Visit our web site: www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.