Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High Frequency Applications Using eGaN® Technology at APEC 2018

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif.--(BUSINESS WIRE)--The EPC team will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2018 in San Antonio, Texas from March 4^th through the 8^th. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

In the company’s booth, #1255, demonstrations will include a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles will be displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

The Premier Event in Applied Power Electronics™, APEC, focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/

Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts:

• Education Seminar: “Maximizing GaN FET and IC Performance, Not Just a Drop in Replacement of MOSFETs”
  Presenters: Alex Lidow, Michael de Rooij, David Reusch, John Glaser
• Exhibitor Seminar: “GaN Transistors for Efficient Power Conversion”
  Presenter: Alex Lidow

• ”Moving Up in Voltage with eGaN^® FETs”
  Presenter: John Glaser

• ”Amplifier Design Challenges for Large Area Highly Resonant Wireless Power Systems”
  Presenter: Michael de Rooij, Yuanzhe Zhang
• “Evaluation of Measurement Techniques for High-Speed GaN Transistors”
  Presenter: Suvankar Biswas, Tom Neville (Tektronix)

• “Design Considerations for GaN Transistor Based Synchronous Rectification”
  Presenter: David Reusch, John Glaser

• “System Optimization of a High-Power Density Non-Isolated Intermediate Bus Converter for 48 V Server Applications”
  Presenter: David Reusch, Suvankar Biswas, Yuanzhe Zhang

Full schedule available at http://epc-co.com/epc/EventsandNews/APEC2018.aspx

Attendees interested in meeting with EPC applications experts during the event can schedule sessions in the EPC booth, or for a private meeting, meet in our customer suite. Private meeting requests can be submitted at http://epc-co.com/epc/Contact/RequestMeeting.aspx

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.