EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.
The chip-scale packaging of The EPC2046 handles thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures a mere 0.95 mm x 2.76 mm (2.62 mm2). Designers no longer have to choose between size and performance – they can have both!
“Manufactured using our latest fifth-generation process, the EPC2046 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN® devices. This opens up entirely new applications beyond the reach of the aging silicon MOSFET and offers a big incentive for users of MOSFETs in existing applications to switch. This latest product is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen.” said Alex Lidow, EPC’s co-founder and CEO.
The EPC9079 development board is a 200 V maximum device voltage, half bridge with onboard gate driver, featuring the EPC2046, onboard gate drive supply and bypass capacitors. This 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the 200 V EPC2046 eGaN FET.
Price and Availability
The EPC2046 eGaN FETs are priced for 1K units at $3.51 each.
The EPC9079 development boards are priced at $118.75 each.
Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.