40V Si MOSFETs: Technology and Cost Comparison Report - Research and Markets

DUBLIN--()--Research and Markets has announced the addition of the "40V Si MOSFETs: Technology and Cost Comparison" report to their offering.

The report proposes an in-depth analysis of the latest innovations in 40V MOSFETs devices showing the differences between manufacturers from the technical and economical points of view.

It includes details on manufacturing process and materials, packaging structure, component design, die size, electrical performances, current density, etc

40V Si MOSFETs are standard devices commonly used in many applications.

Many different manufacturers proponent their device design, but the most common design is the gate trench with diode shield.

More than 15 devices from different manufacturers have been opened and analyzed to understand 40V Si MOSFET technology innovations. The report includes detailed pictures of devices structure and breakdown cost analysis of the manufacturing process.

The report also includes complete chip and module fabrication processes overviews and cost estimation.

For more information about this report visit http://www.researchandmarkets.com/research/dtn3mx/40v_si_mosfets

Contacts

Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com
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For GMT Office Hours Call +353-1-416-8900
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Fax (outside U.S.): +353-1-481-1716
Related Topics: Semiconductor

Contacts

Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com
For E.S.T Office Hours Call 1-917-300-0470
For U.S./CAN Toll Free Call 1-800-526-8630
For GMT Office Hours Call +353-1-416-8900
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Related Topics: Semiconductor