DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Ferroelectric RAM Market Analysis: By Applications; By Products with Forecast (2016-2021)" report to their offering.
Ferroelectric random access memory (FRAM) combines the benefits of DRAM, ROM and flash memory. Faster read and write access is the key benefit FRAM. Higher memory retention is also a key advantage of FRAM over other storage technologies. As the term suggests FRAM uses a ferroelectric layer as against the standard dielectric layer as a result of which the benefits mentioned above ca be realized.
The biggest advantage of FRAM however is the low power requirement for the storage device the makes it popular amongst many device manufacturers. Also, FRAM has the benefit of faster memory recall which is in line with the advantages associated with flash memory, but with higher memory retention. Security applications are expected to be a key driver for the FRAM market because of the higher memory and faster recall properties associated with the storage technology.
In terms of technological development, vendors operating in the market have already invested heavily in R&D of storage technology especially in ferroelectric RAM technology. The technology is expected to be used widely in data centers as well as for wireless sensor operations where data recall will be done wirelessly and hence, speed would have to be of the essence.
- Cypress Semiconductor
- Fujitsu Ltd
- Infineon Technologies
- International Business Machines
- LAPIS Semiconductor
- Texas Instruments
Key Topics Covered:
1. Market Overview
2. Executive Summary
3. Market Landscape
4. Market Forces
5. Strategic Analysis
6. Ferroelectric RAM market By Application
7. Ferroelectric RAM market By Product
8. Ferroelectric RAM market By Geography
9. Ferroelectric RAM Market Entropy
10. Company Profiles
For more information about this report visit http://www.researchandmarkets.com/research/7sq3f5/ferroelectric_ram