EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on November 3rd from 11:00 AM to 12:00 PM (EDT).
GaN transistors and integrated circuits are significantly faster and smaller than their silicon ancestors. This has enabled many new applications such as envelope tracking, LiDAR, wireless energy transfer, and enhanced medical imaging. In this webinar, we will discuss the design and PCB manufacturing methods users need to maximize the speed and size advantages required for embracing the chip-scale package.
The presenters, Alex Lidow, EPC CEO and co-founder, and Michael de Rooij, Vice President of Applications Engineering, are the featured speakers. Both are widely published, including being co-authors of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of gallium nitride transistors.
Webinar Registration Information:
Title: Getting the Most from GaN Transistor and IC Chip-scale Packaging
Date: Thursday, November 3, 2016
Time: 11:00 AM – 12:00 PM (EDT)
Registration Link: https://attendee.gotowebinar.com/register/669598560227319297
Fee: Free of Charge
About IEEE Power Electronics Society (PELS)
The Power Electronics Society is one of the fastest growing technical societies of the Institute of Electrical and Electronics Engineers (IEEE). For over 20 years, PELS has facilitated and guided the development and innovation in power electronics technology. This technology encompasses the effective use of electronic components, the application of circuit theory and design techniques, and the development of analytical tools toward efficient conversion, control, and condition of electric power.
Our members include preeminent researchers, practitioners, and distinguished award winners. IEEE PELS publishes the IEEE Transactions on Power Electronics, a top referenced journal among all IEEE publications.
EPC is the leader in enhancement-mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Visit our web site: www.epc-co.com