15 MHz Half-Bridge Development Boards Use Efficient Power Conversion’s (EPC) eGaN FETs and High Frequency Synchronous Bootstrap Topology

EPC’s new development boards can be configured as either a buck converter or a ZVS class-D amplifier, demonstrating reduced losses at high frequency using an eGaN FET synchronous bootstrap augmented gate drive

EL SEGUNDO, Calif.--()--Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, enabling the designers to get their products into volume production quickly. All three boards feature a zero reverse recovery (QRR) synchronous bootstrap rectifier augmented gate driver to increase efficiency at high frequency operation, up to 15 MHz. The boards can produce a maximum output of 2.7 A in the buck and ZVS class-D amplifier configurations. Loss reduction is realized across the entire current range.

The EPC9066/67/68 feature 40 V, 65 V, and 100 V-rated eGaN FETs respectively. These boards are 2” x 1.5” and are laid out in a half-bridge configuration. Each board uses the Texas Instruments LM5113 gate driver with supply and bypass capacitors. The gate driver has been configured with a synchronous FET bootstrap circuit featuring the 100 V, 2800 mΩ EPC2038 eGaN FET, which eliminates the driver losses induced by the reverse recovery of the internal bootstrap diode. The boards have various probe points and Kelvin measurement points for DC input and output. In addition, the boards provide the capability to install a heat sink for high power operation.

The operating load conditions, including configuration, of the development board determine the optimal design load voltage and resistance, resulting in a specific board’s performance. The device parameters for each board are given in the following table:

       
                 

Demonstration
Board Part
Number

Featured
eGaN® FET
Part
Number

FET
VDS(max)
FET
RDS(on) max
Bootstrap FET

(EPC2038)

        VDS(max)   RDS(on) max

EPC9066

 

EPC8004

 

40 V

  110 mΩ   100 V   2800 mΩ

EPC9067

 

EPC8009

  65 V   130 mΩ   100 V   2800 mΩ

EPC9068

 

EPC8010

  100 V   160 mΩ   100 V   2800 mΩ
 

Quick Start Guides, containing set-up procedures, circuit diagram, bill of material and Gerber files for the boards are provided on-line at http://epc-co.com/epc/Products/DemoBoards.aspx

Price and Availability

The EPC9066/9067/9068 are priced at $158.13 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement-mode gallium nitride based power management technology. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation

Contacts

Efficient Power Conversion Corporation
Joe Engle, 310.986.0350
joe.engle@epc-co.com

Release Summary

EPC’s new EPC9066/67/68 demo boards can be configured as buck converter or a ZVS class-D amplifier, showing reduced losses at high frequency using eGaN FET synchronous bootstrap augmented gate drive.

Contacts

Efficient Power Conversion Corporation
Joe Engle, 310.986.0350
joe.engle@epc-co.com