DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/x6fcjb/global_market) has announced the addition of the "Global Market Size of Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) Market" report to their offering.
Globally the combined market size of Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistor (MOSFETs) was worth USD 4785.6 million in 2013 and it is expected to be more than USD 12 billion by 2021 growing at a CAGR of 11.7% from 2014 to 2021.
The market for IGBTs is relatively mature while the market for MOSFETs is likely to grow at a faster pace due its advance features. MOSFETs are new semiconductors and are anticipated to witness significant demand over the period of 2015 to 2021. In 2013 the IGBTs accounted for more than 75% of the market size of IGBTS and MOSFETs together.
Key attributes such as high efficiency, faster switching and small form factor are expected to boost the demand for MOSFETs over the next few years. MOSFETs are relatively costlier than IGBTs however, IGBTs are already popular in the global market and hence hold larger market size than that of MOSFETs. Additionally, IGBTs find more demand in the industry due to their low prices and higher efficiency however it is preferred in the applications that do not require fast switching.
Key Topics Covered:
2 Executive Summary
3 Market Overview
4 Global IGBT and MOFETs Market Analysis by Product types, 2014 - 2021
5 Global IGBT and MOFETs Market Analysis by Applications, 2014 - 2021
6 IGBT and Super Junction MOFETs Market - Region Analysis , 2013- 2021
7 Company Profiles
- ABB Ltd
- Fujji Electric Company Ltd.
- Hitachi Power Semiconductor Devices Ltd
- Infineon Technologies AG.
- Mitsubishi Electric Corporation
- STMicroelectronics N.V.
- Toshiba Corporation
For more information visit http://www.researchandmarkets.com/research/x6fcjb/global_market