EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the EPC2102, 60 V and the EPC2103, 80 V enhancement-mode monolithic GaN transistor half bridges. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The half bridges are ideal for high frequency DC-DC conversion.
Using an EPC2103 in a typical buck converter, system efficiency is greater than 97% at 20 A, when switching at 500 kHz and converting from 48 V to 12 V. A second device, the EPC2102 60 V half bridge is also being added to the portfolio. This device achieves 98% system efficiency at 18 A, when switching at 500 kHz and converting from 42 V to 14 V.
Both products come in a chip-scale package for improved switching speed and thermal performance and are only 6.05 mm x 2.3 mm for increased power density.
|Voltage||60 V||80 V|
|RDS(on) (typ.)||3.2 mΩ||3.8 mΩ|
|QG (Total Gate Charge)||6.8 nC||6.5 nC|
|Pulsed Drain Current (max)||215 A||195 A|
The EPC9038 and EPC9039 are 2” x 2” (50.8 mm x 50.8 mm) and each contains one EPC2102 or EPC2103 integrated half-bridge component, respectively. Both boards use the Texas Instruments LM5113 gate driver and have onboard supply and bypass capacitors. The boards have been laid out for optimal switching performance and include various probe points to facilitate simple waveform measurement and efficiency calculation.
Price and Availability
The EPC2102 monolithic half-bridges are $6.85 each for 1K units.
The EPC2103 monolithic half-bridges are $7.58 each for 1K units.
The EPC9038 and EPC9039 development boards are $137.75 each.
All are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
Design Information and Support for eGaN FETs:
- Download datasheets at http://epc-co.com/epc/Products/eGaNFETs.aspx
- Download Demo Board design files: http://epc-co.com/epc/Products/DemoBoards.aspx
- Application Note: GaN Integration for Higher DC-DC Efficiency and Power Density at http://bit.ly/EPCan018
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.